Direct growth of InSb nanowires on CdTe (0 0 1) substrates by molecular beam epitaxy
S Thainoi, S Kiravittaya, N Nuntawong… - Materials Science and …, 2022 - Elsevier
The molecular beam epitaxial growth of InSb on CdTe (0 0 1) substrates has been
performed with a specific growth condition, that results in elongated wire morphology …
performed with a specific growth condition, that results in elongated wire morphology …
Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates
Z Zon, TW Lo, ZL Li, S Vorathamrong… - Journal of Vacuum …, 2024 - pubs.aip.org
InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001)
substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in …
substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in …
Investigation of hybrid InSb and GaSb quantum nanostructures
T Korkerdsantisuk, A Sangpho, S Thainoi… - Microelectronic …, 2021 - Elsevier
Abstract Hybrid InSb and GaSb nanostructures (NSs) with different repeated cycles; one, two
and four, are inserted in double AlGaAs/GaAs heterostructures by molecular beam epitaxy in …
and four, are inserted in double AlGaAs/GaAs heterostructures by molecular beam epitaxy in …
Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates
S Thainoi, S Kiravittaya, A Tandaechanurat… - Materials Science and …, 2021 - Elsevier
Various photoluminescence (PL) spectroscopies are applied to reveal the growth-related
properties of self-assembled InSb/GaAs quantum dots (QDs) grown on (001) Ge substrate …
properties of self-assembled InSb/GaAs quantum dots (QDs) grown on (001) Ge substrate …