III–V compounds as single photon emitters
Single-photon emitters (SPEs) are one of the key components in quantum information
applications. The ideal SPEs emit a single photon or a photon-pair on demand, with high …
applications. The ideal SPEs emit a single photon or a photon-pair on demand, with high …
Time-resolved photoluminescence of InGaAs nanostructures different in quantum dimensionality
AM Nadtochiy, SA Mintairov, NA Kalyuzhnyy… - Semiconductors, 2019 - Springer
The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown
on GaAs substrates is studied by time-correlated single photon counting. The …
on GaAs substrates is studied by time-correlated single photon counting. The …
Metamorphic InAs/InAlAs/InGaAs quantum dots: Establishing the limit for indium composition in InGaAs buffers
Abstract Metamorphic InAs/InAlAs/InGaAs quantum dots (QDs) are very interesting
nanostructures for redshifting the emission of zero-dimensional carriers towards the infrared …
nanostructures for redshifting the emission of zero-dimensional carriers towards the infrared …
An analytical approach to study annealing induced interdiffusion of In and Ga for truncated pyramidal InAs/GaAs quantum dots
A strain-assisted model for studying the annealing induced interdiffusion of constituent
atoms in truncated pyramidal InAs/GaAs self-assembled quantum dot (QD) is developed. In …
atoms in truncated pyramidal InAs/GaAs self-assembled quantum dot (QD) is developed. In …
Rashba splitting of Dirac points and symmetry breaking in strained artificial graphene
The effect of Rashba spin-orbit interaction and anisotropic elastic strain on the electronic,
optical, and thermodynamic properties of an artificial graphenelike superlattice composed of …
optical, and thermodynamic properties of an artificial graphenelike superlattice composed of …
Light hole excitons in strain-coupled bilayer quantum dots with small fine-structure splitting
X Shang, H Liu, X Su, S Li, H Hao, D Dai, Z Chen, H Ni… - Crystals, 2022 - mdpi.com
In this work, we measure polarization-resolved photoluminescence spectra from excitonic
complexes in tens of single InAs/GaAs quantum dots (QDs) at the telecom O-band with strain …
complexes in tens of single InAs/GaAs quantum dots (QDs) at the telecom O-band with strain …
Photoelectric and deep level study of metamorphic InAs/InGaAs quantum dots with GaAs confining barriers for photoluminescence enhancement
Abstract Metamorphic InAs/InGaAs quantum dots (QDs) have been proposed as active
elements for optoelectronic light-emitting devices operating in the infrared range. However …
elements for optoelectronic light-emitting devices operating in the infrared range. However …
Defect levels and interface space charge area responsible for negative photovoltage component in InAs/GaAs quantum dot photodetector structure
InAs/GaAs quantum dot photodetector photoresponse spectra consist of quantum dot,
wetting layer and GaAs components, however, they frequently contain features attributed to …
wetting layer and GaAs components, however, they frequently contain features attributed to …
A Quantum Light Source for Quantum Information Applications in the Telecom C-Band
M Anderson - 2021 - repository.cam.ac.uk
Semiconductor quantum dot (QD) quantum light sources have long been established as
suitable candidates for many quantum information applications, due to the on-demand …
suitable candidates for many quantum information applications, due to the on-demand …
Quantum teleportation using coherent emission from telecom C-band quantum dots
Quantum teleportation using coherent emission from telecom C-band quantum dots Page 1
S2A.4.pdf Quantum Information and Measurement (QIM) V: Quantum Technologies © OSA 2019 …
S2A.4.pdf Quantum Information and Measurement (QIM) V: Quantum Technologies © OSA 2019 …