Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic
materials has driven significant research activity, with the goal of realizing their …

Since the early 1980s, most electronics have relied on the use of complementary metal–
oxide–semiconductor (CMOS) transistors. However, the principles of CMOS operation …

Magnetoelectric (ME) effect experimentally discovered about 60 years ago remains one of
the promising research fields with the main applications in microelectronics and sensors …

Abstract The Materials Genome Initiative (MGI) advanced a new paradigm for materials
discovery and design, namely that the pace of new materials deployment could be …

Spintronic and multiferroic systems are leading candidates for achieving attojoule-class
logic gates for computing, thereby enabling the continuation of Moore's law for transistor …

At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Solid-state chemists have been consistently successful in envisioning and making new
compounds, often enlisting the tools of theoretical solid-state physics to explain some of the …

Complex oxides are record holder materials for many phenomena, including ferroelectricity,
piezoelectricity, superconductivity and multiferroicity. Complex oxides often have competing …

In 2017, a new family of in‐plane, chemically‐ordered quaternary MAX phases, coined i‐
MAX, has been reported since 2017. The first i‐MAX phase,(Mo2/3Sc1/3) 2AlC, garnered …