[HTML][HTML] Role of junctionless mode in improving the photosensitivity of sub-10 nm carbon nanotube/nanoribbon field-effect phototransistors: Quantum simulation …
In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon
nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed …
nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed …
Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study
This paper, numerically assesses the analog/RF performance of nanoscale negative
capacitance junctionless carbon nanotube field-effect transistor (NCJL-CNTFET). The …
capacitance junctionless carbon nanotube field-effect transistor (NCJL-CNTFET). The …
[HTML][HTML] Synergy of electrostatic and chemical doping to improve the performance of junctionless carbon nanotube tunneling field-effect transistors: Ultrascaling …
The low on-current and direct source-to-drain tunneling (DSDT) issues are the main
drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube …
drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube …
Improved performance of sub-10-nm band-to-band tunneling nin graphene nanoribbon field-effect transistors using underlap engineering: A quantum simulation study
K Tamersit, Z Ramezani, IS Amiri - Journal of Physics and Chemistry of …, 2022 - Elsevier
In this study, we investigated the effect of underlapping on improving the performance of sub-
10-nm band-to-band tunneling (BTBT) double-gate (DG) armchair-edge graphene …
10-nm band-to-band tunneling (BTBT) double-gate (DG) armchair-edge graphene …
New nanoscale band-to-band tunneling junctionless GNRFETs: Potential high-performance devices for the ultrascaled regime
K Tamersit - Journal of Computational Electronics, 2021 - Springer
Abstract High-performance sub-10-nm field-effect transistors (FETs) are considered to be a
prerequisite for the development of nanoelectronics and modern integrated circuits. Herein …
prerequisite for the development of nanoelectronics and modern integrated circuits. Herein …
Electrothermally assisted surface charge density gradient printing to drive droplet transport
Surface 2019, surface charge density (SCD) gradient printing-driven droplet transport, has
attracted considerable attention as a novel and effective approach, which adopts the water …
attracted considerable attention as a novel and effective approach, which adopts the water …
Leveraging negative capacitance ferroelectric materials for performance boosting of sub-10 nm graphene nanoribbon field-effect transistors: a quantum simulation …
In this paper, an ultrascaled ballistic graphene nanoribbon field-effect transistor (GNRFET)
endowed with a compound double-gate based on metal-ferroelectric-metal (MFM) structure …
endowed with a compound double-gate based on metal-ferroelectric-metal (MFM) structure …
Improved switching performance of nanoscale pin carbon nanotube tunneling field-effect transistors using metal-ferroelectric-metal gating approach
K Tamersit - ECS Journal of Solid State Science and Technology, 2021 - iopscience.iop.org
In this paper, the metal-ferroelectric-metal (MFM) gating design is used to boost the
switching performance of the nanoscale pin carbon nanotube (CNT) tunneling field-effect …
switching performance of the nanoscale pin carbon nanotube (CNT) tunneling field-effect …
Asymmetric dual-gate junctionless GNR tunnel FET as a high-performance photosensor with an electrostatically improved photosensitivity: A Quantum simulation …
K Tamersit - IEEE Sensors Journal, 2023 - ieeexplore.ieee.org
In this article, a new asymmetric dual-gate junctionless graphene nanoribbon tunneling field-
effect phototransistor (DG JL-GNRTFEP) has been proposed using a quantum simulation …
effect phototransistor (DG JL-GNRTFEP) has been proposed using a quantum simulation …
Improving subthreshold slope in Si/InAs/Ge junctionless tunneling FET-based biosensor by using asymmetric gate oxide thickness for low-power applications: A …
M Vadizadeh, M Fallahnejad, P Sotoodeh… - Materials Science and …, 2023 - Elsevier
In this work, a Si/InAs/Ge junctionless tunneling field effect transistor (JL-TFET) based
biosensor has been simulated. The proposed biosensor turns on with a 0.5 V bias supply …
biosensor has been simulated. The proposed biosensor turns on with a 0.5 V bias supply …