Structural, optical, and electrical properties of (Zn, Al) O films over a wide range of compositions
JG Lu, ZZ Ye, YJ Zeng, LP Zhu, L Wang… - Journal of Applied …, 2006 - pubs.aip.org
Zinc oxide (ZnO) is a II-VI compound semiconductor with a wide direct band gap of 3.37 eV
and a large exciton binding energy of 60 meV at room temperature. 1–3 The band gap of …
and a large exciton binding energy of 60 meV at room temperature. 1–3 The band gap of …
[PDF][PDF] Structural, optical, and electrical properties of „Zn, Al… O films over a wide range of compositions
JG Lu, ZZ Ye, YJ Zeng, LP Zhu, L Wang… - JOURNAL OF …, 2006 - researchgate.net
Zinc oxide (ZnO) is a II-VI compound semiconductor with a wide direct band gap of 3.37 eV
and a large exciton binding energy of 60 meV at room temperature. 1–3 The band gap of …
and a large exciton binding energy of 60 meV at room temperature. 1–3 The band gap of …
Structural, optical, and electrical properties of (Zn, Al) O films over a wide range of compositions
JG Lu, ZZ Ye, YJ Zeng, LP Zhu, L Wang… - Journal of Applied …, 2006 - aip.scitation.org
(Zn, Al) O thin films have been prepared by a dc reactive magnetron sputtering system with
the Al contents in a wide range of 0–50 at.%. The structural, optical, and electrical properties …
the Al contents in a wide range of 0–50 at.%. The structural, optical, and electrical properties …
Structural, optical, and electrical properties of (Zn, Al) O films over a wide range of compositions
JG Lu, ZZ Ye, YJ Zeng, LP Zhu, L Wang… - Journal of Applied …, 2006 - ui.adsabs.harvard.edu
Abstract (Zn, Al) O thin films have been prepared by a dc reactive magnetron sputtering
system with the Al contents in a wide range of 0-50at.%. The structural, optical, and electrical …
system with the Al contents in a wide range of 0-50at.%. The structural, optical, and electrical …
Structural, optical, and electrical properties of (Zn, Al) O films over a wide range of compositions
JG Lu, ZZ Ye, YJ Zeng, LP Zhu, L Wang… - Journal of Applied …, 2006 - pubs.aip.org
(Zn, Al) O thin films have been prepared by a dc reactive magnetron sputtering system with
the Al contents in a wide range of 0–50 at.%. The structural, optical, and electrical …
the Al contents in a wide range of 0–50 at.%. The structural, optical, and electrical …
[PDF][PDF] Structural, optical, and electrical properties of „Zn, Al… O films over a wide range of compositions
JG Lu, ZZ Ye, YJ Zeng, LP Zhu, L Wang… - JOURNAL OF …, 2006 - scholar.archive.org
Zinc oxide (ZnO) is a II-VI compound semiconductor with a wide direct band gap of 3.37 eV
and a large exciton binding energy of 60 meV at room temperature. 1–3 The band gap of …
and a large exciton binding energy of 60 meV at room temperature. 1–3 The band gap of …
[引用][C] Structural, optical, and electrical properties of (Zn, Al) O films over a wide range of compositions
JG Lu, ZZ Ye, YJ Zeng, LP Zhu, L Wang, J Yuan… - Journal of Applied …, 2006 - cir.nii.ac.jp