Selective area etching and doping of GaN for high-power applications

B Li, S Wang, AS Chang, L Lauhon, Y Liu… - ECS …, 2021 - iopscience.iop.org
Selective area doping (SAD) of gallium nitride (GaN), especially p-type doping, is desirable
for high-power applications but yet challenging. The lack of this process greatly limits the …
被引用次数：2 相关文章

Selective Area Etching and Doping of GaN for High-Power Applications

B Li, S Wang, AS Chang, L Lauhon… - ECS Meeting …, 2021 - ui.adsabs.harvard.edu
Selective-area doping techniques of GaN have been studied intensively for high-power
applications. Diffusion or implantation of dopants is a very mature approach in Si and SiC …

[引用][C] (Invited) Selective Area Etching and Doping of GaN for High-Power Applications

B Li, S Wang, AS Chang, L Lauhon, Y Liu… - 240th ECS Meeting …, 2021 - ecs.confex.com

Selective Area Etching and Doping of GaN for High-Power Applications

B Li, S Wang, AS Chang, L Lauhon… - 240th ECS …, 2021 - scholars.northwestern.edu
Selective area doping (SAD) of gallium nitride (GaN), especially p-type doping, is desirable
for high-power applications but yet challenging. The lack of this process greatly limits the …

(Invited) Selective Area Etching and Doping of GaN for High-Power Applications

B Li, S Wang, AS Chang, L Lauhon, Y Liu… - Electrochemical …, 2021 - iopscience.iop.org
Selective-area doping techniques of GaN have been studied intensively for high-power
applications. Diffusion or implantation of dopants is a very mature approach in Si and SiC …

Selective Area Etching and Doping of GaN for High-Power Applications

B Li, S Wang, AS Chang, L Lauhon, Y Liu… - ECS …, 2021 - ui.adsabs.harvard.edu
Selective area doping (SAD) of gallium nitride (GaN), especially p-type doping, is desirable
for high-power applications but yet challenging. The lack of this process greatly limits the …