Integration of oxide semiconductor thin films with relaxor-based ferroelectric single crystals with large reversible and nonvolatile modulation of electronic properties

ZX Xu, JM Yan, M Xu, L Guo, TW Chen… - … applied materials & …, 2018 - ACS Publications
We report the fabrication of 0.71 Pb (Mg1/3Nb2/3) O3-0.29 PbTiO3 (PMN-0.29 PT)-based
ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin …
被引用次数：20 相关文章

Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic …

ZX Xu, JM Yan, M Xu, L Guo, TW Chen… - … Applied Materials & …, 2018 - europepmc.org
We report the fabrication of 0.71 Pb (Mg 1/3 Nb 2/3) O 3-0.29 PbTiO 3 (PMN-0.29 PT)-based
ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin …

Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic …

ZX Xu, JM Yan, M Xu, L Guo… - … applied materials & …, 2018 - pubmed.ncbi.nlm.nih.gov
We report the fabrication of 0.71 Pb (Mg 1/3 Nb 2/3) O 3-0.29 PbTiO 3 (PMN-0.29 PT)-based
ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin …

[引用][C] Integration of Oxide Semiconductor Thin Films with Relaxor-Based Ferroelectric Single Crystals with Large Reversible and Nonvolatile Modulation of Electronic …

ZX Xu, JM Yan, M Xu, L Guo, TW Chen, GY Gao… - 2018