Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes

L Wang, S Yang, Y Gao, J Yang, Y Duo… - … applied materials & …, 2023 - ACS Publications
The heteroepitaxy of high-quality aluminum nitride (AlN) with low stress is essential for the
development of energy-efficient deep ultraviolet light-emitting diodes (DUV-LEDs). In this …
被引用次数：7 相关文章

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes.

L Wang, S Yang, Y Gao, J Yang, Y Duo… - … Applied Materials & …, 2023 - europepmc.org
The heteroepitaxy of high-quality aluminum nitride (AlN) with low stress is essential for the
development of energy-efficient deep ultraviolet light-emitting diodes (DUV-LEDs). In this …

Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes

L Wang, S Yang, Y Gao, J Yang… - … applied materials & …, 2023 - pubmed.ncbi.nlm.nih.gov
The heteroepitaxy of high-quality aluminum nitride (AlN) with low stress is essential for the
development of energy-efficient deep ultraviolet light-emitting diodes (DUV-LEDs). In this …