MOSFET‐C‐based grounded active inductors with electronically tunable properties
In this study, two new grounded metal oxide semiconductor field effect transistor (MOSFET)‐
C active inductors (AIs) are proposed. The proposed AIs contain only eight MOS transistors …
C active inductors (AIs) are proposed. The proposed AIs contain only eight MOS transistors …
MOSFET‐C‐based grounded active inductors with electronically tunable properties.
A Yesil, E Yuce, S Minaei - International Journal of RF & …, 2020 - search.ebscohost.com
In this study, two new grounded metal oxide semiconductor field effect transistor (MOSFET)‐
C active inductors (AIs) are proposed. The proposed AIs contain only eight MOS transistors …
C active inductors (AIs) are proposed. The proposed AIs contain only eight MOS transistors …
MOSFET-C-based grounded active inductors with electronically tunable properties
A Yesil, E Yüce, S Minaei - … Journal of RF and Microwave Computer …, 2020 - gcris.pau.edu.tr
In this study, two new grounded metal oxide semiconductor field effect transistor (MOSFET)-
C active inductors (AIs) are proposed. The proposed AIs contain only eight MOS transistors …
C active inductors (AIs) are proposed. The proposed AIs contain only eight MOS transistors …