A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

H Yan, Z Feng, S Shang, X Wang, Z Hu, J Wang… - Nature …, 2019 - nature.com
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields,–. Different device concepts have …
被引用次数：173 相关文章

A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

H Yan, Z Feng, S Shang, X Wang, Z Hu… - Nature …, 2019 - ui.adsabs.harvard.edu
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields 1-3. Different device concepts …

A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

H Yan, Z Feng, S Shang, X Wang… - Nature …, 2019 - pubmed.ncbi.nlm.nih.gov
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields 1-3. Different device concepts …

A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields.

H Yan, Z Feng, S Shang, X Wang, Z Hu… - Nature …, 2019 - europepmc.org
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields 1-3. Different device concepts …

A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

H Yan, Z Feng, S Shang, X Wang, Z Hu… - Nature …, 2019 - pure.psu.edu
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields 1–3. Different device concepts …

[引用][C] A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

H Yan, Z Feng, S Shang, X Wang, Z Hu, J Wang… - Nature …, 2019 - cir.nii.ac.jp
A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields | CiNii
Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 …

A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

H Yan, Z Feng, S Shang, X Wang, Z Hu, J Wang… - arXiv preprint arXiv …, 2019 - arxiv.org
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields. Different device concepts have …

[引用][C] A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

H Yan, Z Feng, S Shang, X Wang, Z Hu, J Wang… - Nature …, 2019 - osti.gov