Reliably Counting Atomic Planes of Few-Layer Graphene (n > 4)
We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
[PDF][PDF] Reliably Counting Atomic Planes of Few-Layer Graphene (n> 4)
YK Koh, MH Bae, DG Cahill, E Pop - pstorage-acs-6854636.s3 …
We acquired the Raman spectra from the same graphene flakes as in the Fig. 2 of the main
text and plot the ratios of the integrated intensity of the 2D and Si peaks, I (2D)/I (Si), in Fig …
text and plot the ratios of the integrated intensity of the 2D and Si peaks, I (2D)/I (Si), in Fig …
Reliably counting atomic planes of few-layer graphene (n> 4)
YK Koh, MH Bae, DG Cahill, E Pop - 2011 - scholarbank.nus.edu.sg
We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
Reliably counting atomic planes of few-layer graphene (n> 4).
YK Koh, MH Bae, DG Cahill, E Pop - ACS Nano, 2010 - europepmc.org
We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene
(FLG) on SiO (2)/Si substrates by Raman spectroscopy. Our approach is based on …
(FLG) on SiO (2)/Si substrates by Raman spectroscopy. Our approach is based on …
[引用][C] Reliably Counting Atomic Planes of Few-Layer Graphene (n> 4)
YK Koh, MH Bae, DG Cahill, E Pop - ACS Nano, 2011 - infona.pl
Reliably Counting Atomic Planes of Few-Layer Graphene ( n > 4) × Close The Infona portal
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Reliably counting atomic planes of few-layer graphene (n> 4)
YK Koh, MH Bae, DG Cahill, E Pop - ACS Nano, 2011 - experts.illinois.edu
We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene
(FLG) on SiO 2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
(FLG) on SiO 2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
[PDF][PDF] Reliably Counting Atomic Planes of Few-Layer Graphene (n> 4)
YK Koh, MH Bae, DG Cahill, E Pop - 2011 - 171.67.73.11
We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
[引用][C] Reliably Counting Atomic Planes of Few-Layer Graphene (n > 4)
YK Koh, MH Bae, DG Cahill, E Pop - ACS Nano, 2010 - cir.nii.ac.jp
Reliably Counting Atomic Planes of Few-Layer Graphene (<i>n</i> > 4) | CiNii Research
CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
Reliably Counting Atomic Planes of Few-Layer Graphene (n> 4)
YK Koh, MH Bae, DG Cahill, E Pop - arXiv preprint arXiv:1009.0362, 2010 - arxiv.org
We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
[PDF][PDF] Reliably Counting Atomic Planes of Few-Layer Graphene (n> 4)
YK Koh, MH Bae, DG Cahill, E Pop - 2011 - poplab.ece.illinois.edu
We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …