Anomalous Hall effect, robust negative magnetoresistance, and memory devices based on a noncollinear antiferromagnetic metal

P Qin, Z Feng, X Zhou, H Guo, J Wang, H Yan… - ACS …, 2020 - ACS Publications
We report the successful fabrication of noncollinear antiferromagnetic D 019 Mn3Ge thin
films on insulating oxide substrates. The anomalous Hall effect and the large parallel …
被引用次数：45 相关文章

Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal

P Qin, Z Feng, X Zhou, H Guo, J Wang, H Yan… - ACS …, 2020 - pubmed.ncbi.nlm.nih.gov
We report the successful fabrication of noncollinear antiferromagnetic D0 19 Mn 3 Ge thin
films on insulating oxide substrates. The anomalous Hall effect and the large parallel …

Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal.

P Qin, Z Feng, X Zhou, H Guo, J Wang, H Yan, X Wang… - ACS Nano, 2020 - europepmc.org
We report the successful fabrication of noncollinear antiferromagnetic D019 Mn3Ge thin
films on insulating oxide substrates. The anomalous Hall effect and the large parallel …