Copper nanoparticles (CuNPs) were chemically deposited on silicon nanowires (SiNWs)
using an electroless dipping method. SiNWs are fabricated by a one-step Ag-assisted …

This paper reports the effects of the silver nanoparticle (Ag-NP) deposition on the optical
properties of silicon nanowire (SiNW) layer. Vertically, SiNW arrays were prepared in …

Silicon nanowires (SiNWs) were obtained on p-Si (100) substrate by Ag-assisted chemical
etching method in two-step process. The influence of the etching duration on the …

Silicon nanowires (SiNWs) were fabricated by metal-assisted chemical etching (MACE)
where hydrofluoric acid (HF), which is typically used in this method, was changed into …

Metal-assisted chemical etching (MACE) of silicon in an aqueous solution of hydrofluoric
acid and hydrogen peroxide is established for the fabrication of large-area uniform silicon …

Here we report on the metal assisted chemical etching method of silicon nanowires (SiNWs)
manufacturing, where the commonly used hydrofluoric acid (HF) has been successfully …

Glancing angle deposited silver (Ag) nanoparticles (NPs) were employed to fabricate the
silicon (Si) nanowire (NW) network on p-type Si substrate. The Si NWs were characterized …

In order to improve photovoltaic efficiency, researches have been carried out on silicon
nanowires (SiNWs). In this article, we report a comparative study between silicon substrate …

In this paper, we report a novel method combining acid vapor etching (AVE) and Lithium (Li)
pore-filling aiming to enhance the opto-electrical properties of silicon nanowires (SiNWs) …

The metal-assisted chemical etching of silicon in an aqueous solution of hydrofluoric acid
and hydrogen peroxide is established for the fabrication of large area, uniform silicon …