Ultrathin hybrid SiAlCOH dielectric films through ring-opening molecular layer deposition of cyclic tetrasiloxane
K Ashurbekova, K Ashurbekova, I Saric… - Chemistry of …, 2021 - ACS Publications
Molecular layer deposition (MLD) is a powerful vapor phase approach for growing thin
polymer films with molecular-level thickness control. We applied the ring-opening MLD …
polymer films with molecular-level thickness control. We applied the ring-opening MLD …
Molecular layer deposition of hybrid siloxane thin films by ring opening of cyclic trisiloxane (V 3 D 3) and azasilane
K Ashurbekova, K Ashurbekova, I Saric… - Chemical …, 2020 - pubs.rsc.org
In this work, we report the first ring opening vapor to solid polymerization of cyclotrisiloxane
and N-methyl-aza-2, 2, 4-trimethylsilacyclopentane by molecular layer deposition (MLD) …
and N-methyl-aza-2, 2, 4-trimethylsilacyclopentane by molecular layer deposition (MLD) …
Molecular layer deposition of a highly stable silicon oxycarbide thin film using an organic chlorosilane and water
In this study, molecular layer deposition (MLD) was used to deposit ultrathin films of
methylene-bridged silicon oxycarbide (SiOC) using bis (trichlorosilyl) methane and water as …
methylene-bridged silicon oxycarbide (SiOC) using bis (trichlorosilyl) methane and water as …
Molecular layer deposition using cyclic azasilanes, maleic anhydride, trimethylaluminum, and water
L Ju, B Bao, SW King, NC Strandwitz - Journal of Vacuum Science & …, 2017 - pubs.aip.org
Molecular layer deposition (MLD) is used to grow hybrid organic–inorganic films based on
two or more self-limiting surface chemical reactions. A four-step ABCD sequence using N-(2 …
two or more self-limiting surface chemical reactions. A four-step ABCD sequence using N-(2 …
Highly stable ultrathin carbosiloxane films by molecular layer deposition
H Zhou, SF Bent - The Journal of Physical Chemistry C, 2013 - ACS Publications
Carbosiloxane thin films are grown by molecular layer deposition (MLD) using 1, 2-bis
[(dimethylamino) dimethylsilyl] ethane and ozone precursors. The films exhibit a constant …
[(dimethylamino) dimethylsilyl] ethane and ozone precursors. The films exhibit a constant …
Ultralow dielectric constant tetravinyltetramethylcyclotetrasiloxane films deposited by initiated chemical vapor deposition (iCVD)
NJ Trujillo, Q Wu, KK Gleason - Advanced Functional Materials, 2010 - Wiley Online Library
Simultaneous improvement of mechanical properties and lowering of the dielectric constant
occur when films grown from the cyclic monomer tetravinyltetramethylcyclotetrasiloxane …
occur when films grown from the cyclic monomer tetravinyltetramethylcyclotetrasiloxane …
Ultralow dielectric constant SiCOH films by plasma enhanced chemical vapor deposition of decamethylcyclopentasiloxane and tetrakis (trimethylsilyloxy) silane …
Y Park, H Lim, S Kwon, W Ban, S Jang, D Jung - Thin Solid Films, 2021 - Elsevier
In semiconductor industry, SiCOH films with low dielectric constant (relative dielectric
constant k≤ 4.0) have been widely used as inter-metal dielectric (IMD) materials in the …
constant k≤ 4.0) have been widely used as inter-metal dielectric (IMD) materials in the …
[HTML][HTML] Molecular layer deposition of hybrid silphenylene-based dielectric film
X Li, M Vehkamäki, M Chundak, K Mizohata… - … Composites and Hybrid …, 2023 - Springer
Molecular layer deposition (MLD) offers molecular level control in deposition of organic and
hybrid thin films. This article describes a new type of inorganic–organic silicon-based MLD …
hybrid thin films. This article describes a new type of inorganic–organic silicon-based MLD …
Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization
A Grill, DA Neumayer - Journal of applied physics, 2003 - pubs.aip.org
Carbon doped oxide dielectrics comprised of Si, C, O, and H (SiCOH) have been prepared
by plasma enhanced chemical vapor deposition (PECVD) from mixtures of …
by plasma enhanced chemical vapor deposition (PECVD) from mixtures of …
Comparative study of trimethyl silane and tetramethylcyclotetrasiloxane-based low-k films
J Widodo, LN Goh, W Lu, SG Mhaisalkar… - Journal of the …, 2005 - iopscience.iop.org
In this work, chemical vapor deposited low-films using trimethylsilane (3MS) as the linear
precursors and tetramethylcyclotetra siloxanes (TMCTS) as the cyclic precursors are …
precursors and tetramethylcyclotetra siloxanes (TMCTS) as the cyclic precursors are …