This work reports on the fabrication process and performances presented by metal insulator
semiconductor (MIS) linear position sensitive detectors (PSD) with an active length of 6cm …

The linearity and sensitivity of linear Position Sensitive Detectors (PSD) are the two principal
characteristics of sensors to be optimised in sensor fabrication. This work presents several …

This paper presents the results achieved in optimized 1D position sensitive detectors (PSD)
using a metal-insulator-semiconductor (MIS) structure and different length to width ratios, in …

We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD),
with 5 cm× 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si: H) …

In this work we investigate the properties of a polymorphous silicon (pm-Si: H) metal-
insulator-semiconductor (MIS) structure used in 3D position sensitive detectors (PSD). For …

In this paper we present an improved version of large area (5 mm× 80 mm) flexible position
sensitive detectors deposited on polyimide (Kapton® VN) substrates with 75 μm thickness …

A linear array thin film position sensitive detector (LTFPSD) based on hydrogenated
amorphous silicon (a-Si: H) is proposed for the first time, taking advantage of the optical …

We have developed large area (up to 80mm× 80mm) Thin Film Position Sensitive Detectors
(TFPSD) based on hydrogenated amorphous silicon (a-Si: H). Although crystalline silicon …

The aim of this work is to present the main optoelectronic characteristics of large area 1D
position sensitive detectors based on amorphous silicon pin diodes. From that, the device …

This paper reports on three different position sensitive detector (PSD) structures based on rf
sputter deposited amorphous silicon. Most of the work reported by other researchers on thin …