The gallium gradient in Cu (In, Ga) Se2 (CIGS) layers, which forms during the two
industrially relevant deposition routes, the sequential and co‐evaporation processes, plays …

Structural defects such as voids and compositional inhomogeneities may affect the
performance of Cu (In, Ga) Se2 (CIGS) solar cells. We analyzed the morphology and …

We report on the interaction between intentional potassium doping of thin film Cu (In, Ga)
Se2 (CIGS) solar cells, CIGS absorber composition, and device efficiency. Up to now high …

Abstract The performance of Cu (In, Ga) Se2 (CIGS) solar cells is limited by the presence of
the highly recombinative CIGS/Mo interface. The recombination at the CIGS/Mo interface is …

Cu (In, Ga)(S, Se) 2 (CIGS) thin film solar cells require appropriate depth and lateral
distributions of alkali metal dopants and gallium to attain world record photovoltaic energy …

Thin-film solar cells with CuIn x Ga 1-x Se 2 (CIGS) absorber are still far below their
efficiency limit, although lab cells already reach 20.1%. One important aspect is the …

Inter-diffusion at the Cu (In, Ga) Se2 (CIGS)/CdS interface of high-efficiency CIGS thin film
solar cells has been investigated using energy dispersive X-ray spectroscopy (EDX) and …

The reason why so-called wide-bandgap CuIn 1− x Ga x Se 2 (CIGSe with x> 0.4) based
solar cells show hindered performance compared with theoretical expectations is still a …

Bandgap engineering in Cu (In, Ga) Se2 (CIGS) based solar cells is an interesting tool to
improve their performance. We fabricate and analyse various kinds of gallium gradings in …

Cu (In, Ga) Se2 (CIGS) thin-films were deposited 'in-line', ie the substrate is moved with
respect to the sources on soda-lime glass (SLG). To better understand the role of substrate …