In ferroelectric oxides, it is well-known that defect engineering can be exploited to stabilize
novel polar phases. In bismuth ferrite (BiFeO3; BFO) epitaxial films, coherent bismuth oxide …

BiFeO 3 (BFO), a Pb-free perovskite oxide, is being explored for its potential use in a
multitude of applications. We report on the oriented growth of BFO thin films using a facile …

Crystal and electronic structures of BiFe O 3 thin films (∼ 10 and∼ 300 nm) grown on SrTi O
3 substrate have been investigated in terms of BiFe O 3 film thickness dependence using the …

The wide band gap of bismuth ferrate-based materials limits their application in
optoelectronic devices, and how to achieve band gap modulation in the simplest manner is …

Defects in ferroelectric materials can cause microscopic strain and electron doping, which
opens up new possibilities for unique physical properties in nanoelectronics. However …

Exploring and manipulating domain configurations in ferroelectric thin films are of critical
importance for the design and fabrication of ferroelectric heterostructures with a novel …

The microstructure of BiFeO 3 (BFO) thin films is investigated using high-resolution
transmission electron microscopy. Both (001)-and (101)-type domain boundaries are found …

The local atomic structure and nanoscale chemistry of an antipolar phase in Bi0. 9Sm0.
1FeO3 epitaxial thin films are examined by an array of transmission electron microscopy …

Point defects commonly exist in artificially prepared ferroelectric oxide films. Here, the local
polarization characteristics around a single point defect of Bi substitution in the Fe sites …

Crystal and electronic structures of~ 380 nm BiFeO3 film grown on LaAlO3 substrate are
comprehensively studied using advanced transmission electron microscopy (TEM) …