Abstract High-performance sub-10-nm field-effect transistors (FETs) are considered to be a
prerequisite for the development of nanoelectronics and modern integrated circuits. Herein …

In this paper, a new ultrascaled junctionless graphene nanoribbon tunnel field-effect
transistor (JL GNRTFET) is proposed through a computational study. The quantum …

In this study, we investigated the effect of underlapping on improving the performance of sub-
10-nm band-to-band tunneling (BTBT) double-gate (DG) armchair-edge graphene …

As the channel length shrinks below the 10-nm regime, emerging materials, junctionless
technology, and multiple-gate geometries provide an excellent combination to continue …

By inserting a lightly doped region between the highly doped drain and the intrinsic channel
of a graphene nanoribbon tunnel field effect transistor (GNR-TFET), we propose a new …

In this paper, new graphene nanoribbon tunnel field-effect transistors (GNRTFETs) endowed
with specific doping profiles are proposed, assessed, and compared with the conventional …

In this paper, for the first time device characteristics of field-effect tunneling transistors based
on vertical graphene-hBN heterostructure (VTGFET) and vertical graphene nanoribbon …

Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic
applications. Because GNR fabrication technology is still in an early stage, modelling of …

The performance of graphene nanoribbon field effect transistor (GNR FET) is investigated
from a numerical model based on self-consistent non-equilibrium Green's Function (NEGF) …

In this paper, to minimize the tunneling leakage current, we propose a graphene nanoribbon
(GNR) field effect transistor (FET) using lightly doped drain and source (LDDS) between …