In this paper, new graphene nanoribbon tunnel field-effect transistors (GNRTFETs) endowed
with specific doping profiles are proposed, assessed, and compared with the conventional …

In this paper, a new ultrascaled junctionless graphene nanoribbon tunnel field-effect
transistor (JL GNRTFET) is proposed through a computational study. The quantum …

By inserting a lightly doped region between the highly doped drain and the intrinsic channel
of a graphene nanoribbon tunnel field effect transistor (GNR-TFET), we propose a new …

In this paper, to minimize the tunneling leakage current, we propose a graphene nanoribbon
(GNR) field effect transistor (FET) using lightly doped drain and source (LDDS) between …

Electrostatic doping (ED)-based graphene nanoribbon (GNR) tunneling field-effect transistor
(TFET) with trigate design is studied. The transfer and output characteristics of the GNR …

Abstract High-performance sub-10-nm field-effect transistors (FETs) are considered to be a
prerequisite for the development of nanoelectronics and modern integrated circuits. Herein …

This paper introduces a dual gate Graphene Nano-Ribbon Tunnel Field Effect Transistor
(DG GNR TFET) structure and its performance characteristics are analysed. Technology …

As the channel length shrinks below the 10-nm regime, emerging materials, junctionless
technology, and multiple-gate geometries provide an excellent combination to continue …

A new structure for graphene nanoribbon field-effect transistors (GNRFETs) is proposed and
investigated using quantum simulation with a nonequilibrium Green's function (NEGF) …

A semi-classical and a semi-quantum current transport model for pin n-type armchair
graphene nanoribbon tunnel field effect transistor (TFET) are studied analytically. The …