Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window

L Leguay, A Chellu, J Hilska, E Luna… - Materials for …, 2024 - iopscience.iop.org
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the
development of deterministic sources of high-quality quantum states of light. Such non …

[HTML][HTML] Highly uniform GaSb quantum dots with indirect–direct bandgap crossover at telecom range

A Chellu, J Hilska, JP Penttinen, T Hakkarainen - APL Materials, 2021 - pubs.aip.org
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum
dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched …

Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band

J Michl, G Peniakov, A Pfenning… - Advanced Quantum …, 2023 - Wiley Online Library
Generating single photons in the telecommunication wavelength range from semiconductor
quantum dots (QDs) and interfacing them with spins of electrons or holes is of high interest …

Absorption dynamics of type-II GaSb/GaAs quantum dots

K Komolibus, T Piwonski, CJ Reyner, B Liang… - Optical Materials …, 2017 - opg.optica.org
In this paper room temperature pump-probe spectroscopy is employed to study ultrafast
absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong …

An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

F Qiu, W Qiu, Y Li, X Wang, Y Zhang, X Zhou… - …, 2015 - iopscience.iop.org
We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs
quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid …

Ultrafast photocarrier dynamics in InAs/GaAs self-assembled quantum dots investigated via optical pump-terahertz probe spectroscopy

VP Juguilon, DA Lumantas-Colades… - Journal of Physics D …, 2024 - iopscience.iop.org
Optical pump-terahertz probe (OPTP) spectroscopy was performed to measure the lifetime of
photogenerated carriers in the barrier and the wetting layer (WL) regions of an indium …

GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 µm

J Richter, J Strassner, TH Loeber, H Fouckhardt… - Journal of Crystal …, 2014 - Elsevier
We report on the epitaxial growth of GaSb quantum dots (QDs) that show
photoluminescence at a wavelength of around 1.3 µm and a high hole localization energy of …

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP (001)

P Steindl, EM Sala, B Alén, D Bimberg… - New Journal of …, 2021 - iopscience.iop.org
Understanding the carrier dynamics of nanostructures is the key for development and
optimization of novel semiconductor nano-devices. Here, we study the optical properties and …

Density-dependent carrier dynamics in a quantum dots-in-a-well heterostructure

RP Prasankumar, WW Chow, J Urayama… - Applied Physics …, 2010 - pubs.aip.org
The incorporation of semiconductor quantum dots into different heterostructures for
applications in nanoscale lasing and amplification has been an active area of research in …

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band

P Holewa, M Burakowski, A Musiał, N Srocka… - Scientific Reports, 2020 - nature.com
Single-photon sources are key building blocks in most of the emerging secure
telecommunication and quantum information processing schemes. Semiconductor quantum …