Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the
development of deterministic sources of high-quality quantum states of light. Such non …
development of deterministic sources of high-quality quantum states of light. Such non …
[HTML][HTML] Highly uniform GaSb quantum dots with indirect–direct bandgap crossover at telecom range
A Chellu, J Hilska, JP Penttinen, T Hakkarainen - APL Materials, 2021 - pubs.aip.org
We demonstrate a new quantum-confined semiconductor material based on GaSb quantum
dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched …
dots (QDs) embedded in a single-crystalline AlGaSb matrix by filling droplet-etched …
Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band
Generating single photons in the telecommunication wavelength range from semiconductor
quantum dots (QDs) and interfacing them with spins of electrons or holes is of high interest …
quantum dots (QDs) and interfacing them with spins of electrons or holes is of high interest …
Absorption dynamics of type-II GaSb/GaAs quantum dots
K Komolibus, T Piwonski, CJ Reyner, B Liang… - Optical Materials …, 2017 - opg.optica.org
In this paper room temperature pump-probe spectroscopy is employed to study ultrafast
absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong …
absorption dynamics in type-II GaSb/GaAs quantum dots (QDs). Our results identify a strong …
An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots
F Qiu, W Qiu, Y Li, X Wang, Y Zhang, X Zhou… - …, 2015 - iopscience.iop.org
We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs
quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid …
quantum dots. The GaSb/GaAs quantum dots (QDs) were grown using a modified liquid …
Ultrafast photocarrier dynamics in InAs/GaAs self-assembled quantum dots investigated via optical pump-terahertz probe spectroscopy
VP Juguilon, DA Lumantas-Colades… - Journal of Physics D …, 2024 - iopscience.iop.org
Optical pump-terahertz probe (OPTP) spectroscopy was performed to measure the lifetime of
photogenerated carriers in the barrier and the wetting layer (WL) regions of an indium …
photogenerated carriers in the barrier and the wetting layer (WL) regions of an indium …
GaSb quantum dots on GaAs with high localization energy of 710 meV and an emission wavelength of 1.3 µm
J Richter, J Strassner, TH Loeber, H Fouckhardt… - Journal of Crystal …, 2014 - Elsevier
We report on the epitaxial growth of GaSb quantum dots (QDs) that show
photoluminescence at a wavelength of around 1.3 µm and a high hole localization energy of …
photoluminescence at a wavelength of around 1.3 µm and a high hole localization energy of …
On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP (001)
Understanding the carrier dynamics of nanostructures is the key for development and
optimization of novel semiconductor nano-devices. Here, we study the optical properties and …
optimization of novel semiconductor nano-devices. Here, we study the optical properties and …
Density-dependent carrier dynamics in a quantum dots-in-a-well heterostructure
RP Prasankumar, WW Chow, J Urayama… - Applied Physics …, 2010 - pubs.aip.org
The incorporation of semiconductor quantum dots into different heterostructures for
applications in nanoscale lasing and amplification has been an active area of research in …
applications in nanoscale lasing and amplification has been an active area of research in …
Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
Single-photon sources are key building blocks in most of the emerging secure
telecommunication and quantum information processing schemes. Semiconductor quantum …
telecommunication and quantum information processing schemes. Semiconductor quantum …