Integration of oxide semiconductor thin films with relaxor-based ferroelectric single crystals with large reversible and nonvolatile modulation of electronic properties

ZX Xu, JM Yan, M Xu, L Guo, TW Chen… - … applied materials & …, 2018 - ACS Publications
We report the fabrication of 0.71 Pb (Mg1/3Nb2/3) O3-0.29 PbTiO3 (PMN-0.29 PT)-based
ferroelectric field effect transistors (FeFETs) by the epitaxial growth of cobalt-doped tin …

Ultrahigh Tunability of Room Temperature Electronic Transport and Ferromagnetism in Dilute Magnetic Semiconductor and PMN‐PT Single‐Crystal‐Based Field …

QX Zhu, MM Yang, M Zheng, RK Zheng… - Advanced Functional …, 2015 - Wiley Online Library
Multiferroic heterostructures composed of complex oxide thin films and ferroelectric single
crystals have aroused considerable interest due to the electrically switchable strain and …

Semiconductor/piezoelectrics hybrid heterostructures with highly effective gate-tunable electrotransport and magnetic behaviors

L Chen, WY Zhao, J Wang, GY Gao… - … Applied Materials & …, 2016 - ACS Publications
We report the epitaxial growth of oxygen deficient titanium dioxide thin films on 0.7 Pb
(Mg1/3Nb2/3) O3-0.3 PbTiO3 (PMN-PT) single crystals and realized highly effective in situ …

Non-volatile ferroelectric control of room-temperature electrical transport in perovskite oxide semiconductor La: BaSnO 3

S Heo, D Yoon, S Yu, J Son, HM Jang - Journal of Materials Chemistry …, 2017 - pubs.rsc.org
Complex oxide heterostructures composed of oxide semiconductor thin films and
ferroelectric single crystals have attracted substantial interest due to the electrically …

Epitaxial Strain Enhanced Ferroelectric Polarization toward a Giant Tunneling Electroresistance

X Li, J Liu, J Huang, B Huang, L Li, Y Li, W Hu, C Li… - ACS …, 2024 - ACS Publications
A substantial ferroelectric polarization is the key for designing high-performance ferroelectric
nonvolatile memories. As a promising candidate system, the BaTiO3/La0. 67Sr0. 33MnO3 …

Atomic-Scale insight into the reversibility of polar order in ultrathin epitaxial Nb: SrTiO3/BaTiO3 heterostructure and its implication to resistive switching

J Yao, M Ye, Y Sun, Y Yuan, H Fan, Y Zhang, C Chen… - Acta Materialia, 2020 - Elsevier
Ferroelectric heterostructures with bi-stable state of polarization are appealing for data
storage as well as tunable functionalities such as memristor behavior. While an increasing …

[HTML][HTML] Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)

M Liu, J Hoffman, J Wang, J Zhang… - Scientific reports, 2013 - nature.com
A central goal of electronics based on correlated materials or 'Mottronics' is the ability to
switch between distinct collective states with a control voltage. Small changes in structure …

Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films

D Pantel, S Goetze, D Hesse, M Alexe - ACS nano, 2011 - ACS Publications
Spontaneous polarization of ferroelectric materials has been for a long time proposed as
binary information support, but it suffers so far from destructive readout. A nondestructive …

[HTML][HTML] Ferroelectric memory field-effect transistors using CVD monolayer MoS2 as resistive switching channel

PC Shen, C Lin, H Wang, KH Teo, J Kong - Applied Physics Letters, 2020 - pubs.aip.org
Ferroelectric field-effect transistors (FeFETs) have been considered as promising electrically
switchable nonvolatile data storage elements due to their fast switching speed …

[HTML][HTML] Ferroelectricity and self-polarization in ultrathin relaxor ferroelectric films

P Miao, Y Zhao, N Luo, D Zhao, A Chen, Z Sun… - Scientific reports, 2016 - nature.com
We report ferroelectricity and self-polarization in the (001) oriented ultrathin relaxor
ferroelectric PMN-PT films grown on Nb-SrTiO3, SrRuO3 and La0. 7Sr0. 3MnO3 …