We present a combined experimental and theoretical study of InAs/InGaAs/GaAs quantum
dots capable of single photon emission in the technologically important telecom C-band for …

Results for the development and detailed analysis of self-organized InAs/InAlGaAs/InP
quantum dots suitable for single-photon emission at the 1.55 μ m telecom wavelength are …

Single-photon sources are key building blocks in most of the emerging secure
telecommunication and quantum information processing schemes. Semiconductor quantum …

The optical properties of single InAs 1− x P x/InP quantum dots are investigated by spectrally
resolved and time-resolved photoluminescence measurements as a function of excitation …

We present a detailed investigation into the optical characteristics of individual InAs
quantum dots (QDs) grown by metalorganic chemical vapor deposition, with low …

A systematic study of the impact of annealing on the electronic properties of single In As∕
Ga As quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are …

We have studied the low-temperature photoluminescence (PL) of the self-assembled InAs
single quantum dots (QDs) using conventional micro-PL setup to detect PL from an …

We study the low-temperature photoluminescence (PL) from self-assembled InAs quantum
dots as a function of a wide range of external parameters such as excitation power and …

Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …

We report an experimental investigation of the dephasing of excitons and multiexcitons in
technologically relevant undoped and p-doped InAs/GaAs dot-in-a-well structures emitting …