Multiferroic heterostructures showing both electric and magnetic orders have attracted much
attention because of their promising applications in the next generation of memories …

In data storage devices, spin, ferroelectric, or optical indices have been utilized as
information carriers, and the binate couplings among the three parameters are explored to …

As semiconductor devices reach ever smaller dimensions, the challenge of power
dissipation and quantum effect place a serious limit on the future device scaling. Recently, a …

Multiferroic heterostructures can be synthesized by integrating monolithic ferroelectric and
magnetic materials, with interfacial coupling between electric polarization and …

Electric-field control of magnetism is significant for the next generation of large-capacity and
low-power data storage technology. In this regard, the renaissance of a multiferroic …

Although the basic concept was proposed only about 10 years ago, multiferroic tunnel
junctions (MFTJs) with a ferroelectric barrier sandwiched between two ferromagnetic …

We review the recent progress in the field of multiferroic magnetoelectric heterostructures.
The lack of single phase multiferroic candidates exhibiting simultaneously strong and …

We report on first-principles calculations of a Ni monolayer inserted at one interface in the
epitaxial Fe/PbTiO 3/Fe multiferroic heterostructure, focusing on the magnetoelectric …

Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, the
mainstream writing operation of MTJs mainly relies on electric current with high energy …

The ever increasing demand for ultralow power electronics has propelled the exploration of
novel multiferroics for realizing voltage control of magnetism in an energy efficient manner …