A two terminal image and color sensitive detector based on two stacked sensing/switching
pin a-SiC: H diodes is presented. The imaging is performed in a write-read simultaneous …

A large area colour imager optically addressed is presented. The colour imager consists of a
thin wide band gap pin a-SiC: H filtering element deposited on the top of a thick large area a …

A two terminal optically addressed image processing device based on two stacked
sensing/switching p–i–n a-SiC: H diodes is presented. The charge packets are injected …

Large area pin a-SiC: H heterostructures are used as LSP color sensors. For reading out the
color signals, three appropriated voltages have to be successively applied in order to …

A SPICE model of the three color a-SiC: H/a-Si: H p–i–n/p–i–n detector operation is
presented. The equivalent electric circuit able to describe the behavior of the multilayer …

An adjustable threshold color detector (ATCD) is demonstrated, based on a hydrogenated
amorphous silicon (a‐Si: H) and silicon–carbide (a‐SiC: H) p+‐i‐n+‐i‐n+‐i‐p+ multilayer …

In this paper we present results on the optimization of an pinpii 'n'type a-Si: H based three
color detector with voltage controlled spectral sensitivity. The sensor element was fabricated …

In this paper, we report experimental findings on a 4H-SiC-based pin photodiode. The
fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a …

The sensitive devices are multilayer stacked structures p–i–n/p–i–n based on a-SiC: H and a-
Si: H between two transparent conductive contacts. The thickness and the absorption …

We present the Adjustable Threshold Color Detectors (ATCDs) based on stacked
heterojunctions of amorphous silicon (a-Si: H) and silicon carbide (a-SiC: H). These devices …