Layer-dependent properties of and two-dimensional materials

JM Gonzalez, II Oleynik - Physical Review B, 2016 - APS
The layer-dependent structural, electronic, and vibrational properties of SnS 2 and SnSe 2
are investigated using first-principles density functional theory (DFT). The in-plane lattice …

Low-Frequency Raman Spectroscopy of Few-Layer 2H-SnS2

T Sriv, K Kim, H Cheong - Scientific reports, 2018 - nature.com
We investigated interlayer phonon modes of mechanically exfoliated few-layer 2H-SnS2
samples by using room temperature low-frequency micro-Raman spectroscopy. Raman …

Field-effect transistors of high-mobility few-layer SnSe2

C Guo, Z Tian, Y Xiao, Q Mi, J Xue - Applied Physics Letters, 2016 - pubs.aip.org
We report the transport properties of mechanically exfoliated few-layer SnSe 2 flakes, whose
mobility is found to be∼ 85 cm 2 V− 1 s− 1 at 300 K, higher than those of the majority of few …

Optical phonon anisotropies in the layer crystals Sn and Sn

G Lucovsky, JC Mikkelsen Jr, WY Liang, RM White… - Physical Review B, 1976 - APS
We have measured the far-ir reflectance spectra for the layer crystals Sn S 2 and Sn Se 2 for
the two principal polarizations, E→⊥ c→ and E→∥ c→. We find a large difference in the …

Synthesis of large-scale atomic-layer SnS2 through chemical vapor deposition

G Ye, Y Gong, S Lei, Y He, B Li, X Zhang, Z Jin, L Dong… - Nano Research, 2017 - Springer
Two-dimensional layers of metal dichalcogenides have attracted much attention because of
their ultrathin thickness and potential applications in electronics and optoelectronics …

Band Gap Engineering of Hexagonal SnSe2 Nanostructured Thin Films for Infra-Red Photodetection

EP Mukhokosi, SB Krupanidhi, KK Nanda - Scientific reports, 2017 - nature.com
We, for the first time, provide the experimental demonstration on the band gap engineering
of layered hexagonal SnSe2 nanostructured thin films by varying the thickness. For 50 nm …

Raman spectra of SnS2 and SnSe2

DG Mead, JC Irwin - Solid State Communications, 1976 - Elsevier
The first order Raman spectra of the Group IVa layer compounds SnS 2 and SnSe 2 are
presented. The two Raman active modes of each compound have been identified and on …

Composition-tunable 2D SnSe 2 (1− x) S 2x alloys towards efficient bandgap engineering and high performance (opto) electronics

Y Wang, L Huang, B Li, J Shang, C Xia… - Journal of Materials …, 2017 - pubs.rsc.org
Efficient bandgap engineering is a significant strategy for the utilization of widely concerned
two-dimensional (2D) layered materials in versatile devices such as nanoelectronics …

Multiwavelength excitation Raman scattering study of Sb2Se3 compound: fundamental vibrational properties and secondary phases detection

P Vidal-Fuentes, M Guc, X Alcobe, T Jawhari… - 2D …, 2019 - iopscience.iop.org
This work presents a complete analysis of Raman active modes of Sb 2 Se 3 measured by
six different excitation wavelengths from NIR to UV, under different polarization …

Ultra low lattice thermal conductivity and high carrier mobility of monolayer SnS 2 and SnSe 2: a first principles study

A Shafique, A Samad, YH Shin - Physical Chemistry Chemical Physics, 2017 - pubs.rsc.org
Using density functional theory, we systematically investigate the lattice thermal conductivity
and carrier mobility of monolayer SnX2 (X= S, Se). The room-temperature ultra low lattice …