The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …

The invention relates to a method of providing a structure by depositing a layer on a
substrate in a reactor. The method comprising: introducing a silicon halide precursor in the …

Disclosed herein is a method of depositing a thin film. An exemplary embodiment of the
present invention provides a method of depositing a thin film, including: a step of forming a …

The invention relates to a method of providing a structure by depositing a layer on a
substrate in a reactor. The method comprising:

A method of filling a recess with an insulation film includes: introducing an alkoxysilane or
aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction …

Embodiments of the present invention provide a method for forming a dielectric film on a
Substrate comprising placing a substrate with at least one formed feature across a surface of …

An embodiment of the present invention provides a method of forming a dielectric film
having Si C bonds and/or Si N bonds on a semiconductor Substrate by cyclic deposition …

A method for forming a single-phase multi-element film on a substrate in a reaction zone by
PEALD repeating a single deposition cycle. The single deposition cycle includes: adsorbing …

A platform for processing a substrate in a processing chamber of a reactor includes an
annular body with a recessed, generally planar substrate support surface for supporting the …

The present invention describes a method and apparatus for forming a uniform Silicon
containing film in a single wafer reactor. According to the present invention, a Silicon con …