Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution

H Li, X Wu, H Liu, B Zheng, Q Zhang, X Zhu, Z Wei… - ACS …, 2017 - ACS Publications
Composition-controlled growth of two-dimensional layered semiconductor heterostructures
is crucially important for their applications in multifunctional integrated photonics and …

Controllable Epitaxial Growth of MoSe2 Bilayers with Different Stacking Orders by Reverse-Flow Chemical Vapor Deposition

G Peng, X Yang, S Wang, J Zhang, G Qi… - … applied materials & …, 2020 - ACS Publications
The stacking order plays a critical role in the electronic and optical properties of two-
dimensional materials. It is however of great challenge to achieve large-size and …

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

X Duan, C Wang, JC Shaw, R Cheng, Y Chen… - Nature …, 2014 - nature.com
Two-dimensional layered semiconductors such as MoS2 and WSe2 have attracted
considerable interest in recent times. Exploring the full potential of these layered materials …

Direct Synthesis and Enhanced Rectification of Alloy‐to‐Alloy 2D Type‐II MoS2(1‐x)Se2x/SnS2(1‐y)Se2y Heterostructures

X Wang, L Pan, J Yang, B Li, YY Liu… - Advanced Materials, 2021 - Wiley Online Library
The interfacial tunable band alignment of heterostructures is coveted in device design and
optimization of device performance. As an intentional approach, alloying allows band …

In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2–MoSe2 Lateral Heterostructures and Photodetector Application

X Chen, Y Qiu, H Yang, G Liu, W Zheng… - … applied materials & …, 2017 - ACS Publications
Considering the unique layered structure and novel optoelectronic properties of individual
MoS2 and MoSe2, as well as the quantum coherence or donor–acceptor coupling effects …

Layer-by-Layer Growth of AA-Stacking MoS2 for Tunable Broadband Phototransistors

X Luo, Z Peng, Z Wang, M Dong - ACS Applied Materials & …, 2021 - ACS Publications
The stacking configuration has been considered as an important additional degree of
freedom to tune the physical property of layered materials, such as superconductivity and …

Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy

L Samad, SM Bladow, Q Ding, J Zhuo… - ACS …, 2016 - ACS Publications
The fascinating semiconducting and optical properties of monolayer and few-layer transition
metal dichalcogenides, as exemplified by MoS2, have made them promising candidates for …

Layer-Selective Synthesis of MoS2 and WS2 Structures under Ambient Conditions for Customized Electronics

S Park, A Lee, KH Choi, SK Hyeong, S Bae, JM Hong… - ACS …, 2020 - ACS Publications
Transition metal dichalcogenides (TMDs) have attracted significant interest as one of the key
materials in future electronics such as logic devices, optoelectrical devices, and wearable …

Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano-and opto-electronic applications

A Sharma, R Mahlouji, L Wu, MA Verheijen… - …, 2020 - iopscience.iop.org
The patterned growth of transition metal dichalcogenides (TMDs) and their lateral
heterostructures is paramount for the fabrication of application-oriented electronics and …

Direct Vapor Phase Growth and Optoelectronic Application of Large Band Offset SnS2/MoS2 Vertical Bilayer Heterostructures with High Lattice Mismatch

B Li, L Huang, M Zhong, Y Li, Y Wang… - Advanced Electronic …, 2016 - Wiley Online Library
2D van der Waals heterostructures with different types of band alignment have recently
attracted great attention due to their unique optical and electrical properties. Most 2D …