In this paper, an ultrascaled ballistic graphene nanoribbon field-effect transistor (GNRFET)
endowed with a compound double-gate based on metal-ferroelectric-metal (MFM) structure …

In this paper, we report the device performance of a new graphene nanoribbon field-effect
transistor (GNRFET) with a linearly graded binary metal alloy gate through a quantum …

In this paper, a novel structure for a dual-gated graphene nanoribbon field-effect transistor
(GNRFET) is offered, which combines the advantages of high and low dielectric constants. In …

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the
electronic behavior shows fascinating properties, giving high expectation for the possible …

In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect
Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption …

This paper introduces dual-material gate (DMG) configuration on a bilayer graphene
nanoribbon field-effect transistor (BLGNRFET). Its device characteristics based on …

As the channel length shrinks below the 10-nm regime, emerging materials, junctionless
technology, and multiple-gate geometries provide an excellent combination to continue …

Moore's law is approaching its limit due to various challenges, especially the size limit of the
transistors. The International Roadmap for Devices and Systems (IRDS), the successor of …

In nanoscale transistors, electron tunneling increases and causes a large leakage current
due to the reduced channel length and gate oxide thickness. To reduce the short-channel …

Graphene nanoribbons (GNRs) are an emerging material for future nanoelectronic
applications. Because GNR fabrication technology is still in an early stage, modelling of …