Nonvolatile magnetoelectric switching of magnetic tunnel junctions with dipole interaction
The magnetoelectric effect is technologically appealing because of its ability to manipulate
magnetism using an electric field rather than magnetic field or current, thus providing a …
magnetism using an electric field rather than magnetic field or current, thus providing a …
[HTML][HTML] Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
Electrically switchable magnetization is considered a milestone in the development of
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …
Full voltage manipulation of the resistance of a magnetic tunnel junction
One of the motivations for multiferroics research is to find an energy-efficient solution to
spintronic applications, such as the solely electrical control of magnetic tunnel junctions …
spintronic applications, such as the solely electrical control of magnetic tunnel junctions …
[HTML][HTML] Manipulation of magnetization switching and tunnel magnetoresistance via temperature and voltage control
H Liu, R Wang, P Guo, Z Wen, J Feng, H Wei, X Han… - Scientific reports, 2015 - nature.com
Magnetization switching between parallel and antiparallel alignments of two magnetic layers
in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external …
in magnetic tunnel junctions (MTJs) is conventionally controlled either by an external …
Ultralow current switching of synthetic‐antiferromagnetic magnetic tunnel junctions via electric‐field assisted by spin–orbit torque
Spintronic devices, especially electric‐field and spin–orbit torque driven magnetic tunnel
junctions (MTJs), are promising candidates to replace the current memory and logic …
junctions (MTJs), are promising candidates to replace the current memory and logic …
Bipolar electric-field switching of perpendicular magnetic tunnel junctions through voltage-controlled exchange coupling
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields
have extensive applications in energy-efficient memory and logic devices. Voltage …
have extensive applications in energy-efficient memory and logic devices. Voltage …
Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling
Y Zhang, W Sun, K Cao, XX Yang, Y Yang, S Lu… - Science …, 2024 - science.org
Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, the
mainstream writing operation of MTJs mainly relies on electric current with high energy …
mainstream writing operation of MTJs mainly relies on electric current with high energy …
Voltage-driven 180° magnetization switching in magnetoelectric heterostructures
Voltage-driven non-volatile 180° magnetization switching without electric current provides
an energy efficiency alternative to current-driven spintronics. Here, by using the finite …
an energy efficiency alternative to current-driven spintronics. Here, by using the finite …
[HTML][HTML] Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …
Voltage-induced switching in magnetic tunnel junctions with perpendicular magnetic anisotropy
Spintronic devices can be operated by either a magnetic field or a spin polarized current;
however, the former is not site-specific, and the latter suffers from large current density …
however, the former is not site-specific, and the latter suffers from large current density …