Reduction in the dimensions of silicon based devices has produced extraordinary
developments in the performance of electronic systems. Recently, the advantages and …

The graphene nanoribbon (GNR) field effect transistor is one of the most competitive
candidates for beyond‐CMOS nanoelectronics because of the special electric …

The limits of silicon capabilities are being reached, coincidently, the discovery of graphene
with its unique nano-scale properties is paving the way to possible substitutes for the next …

Graphene nanoribbons show unique properties and have attracted a lot of attention in the
recent past. Intensive theoretical and experimental studies on such nanostructures at both …

In the last decade, surface-assisted reactions involving well-defined molecular precursors
have led to the controlled assembly of several clean-edged and defect-free graphene …

In the last decade, as semiconductor industry was approaching the end of the exponential
Moore's roadmap for device downscaling, the necessity of finding new candidate materials …

Owing to Moore's law and the advancements in microelectronics, the industry is shifting to
nanoelectronics. The materials used for nanoelectronics applications are termed as …

ABSTRACT Recently, two-dimensional (2D) nanomaterials have received huge attention
because of their attractiveness for use in many electronic and optoelectronic devices …

Graphene is a semimetal with a zero band gap, and therefore cannot be used for effective
field-effect transistors (FETs) at room temperature. Theoretical study predicted an …

Calculation of electronic structures has been performed for graphene nanoribbons with eight-
armchair edges containing nitrogen or boron substitutional impurity by using ab initio density …