We report on a spin filter effect that emerges at potential barriers between a≃ 10 nm thick
magnetic surface layer and nonmagnetic regions prepared at the surface of Li-doped ZnO …

After more than a decade of extensive research on the magnetic order triggered by lattice
defects in a wide range of nominally non-magnetic materials, we report its application in a …

Spin-polarized electron transport through a zigzag zinc oxide nanoribbon (ZnONR) has
been studied using first-principles transport simulations. Ribbons without edges passivated …

The wide bandgap semiconductor ZnO is interesting for spintronic applications because of
its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin …

Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for
building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling …

The primary aim of this work was to develop a ZnO based diluted magnetic semiconductor
(DMS) materials system which displays ferromagnetism above room temperature and to …

Co/ZnO and Co/ZnAlO films were prepared by depositing ultrathin cobalt layers and
semiconductor layers on glass substrates at room temperature. The films consist of metallic …

Figure 1: Optimal spin transport in a semiconductor channel. This plot shows how the
resistance between a ferromagnetic contact (the “injector”) and a semiconducting channel …

We report a large circular photogalvanic effect (CPGE) in a 2DEG created at the interface of
a semiconductor/insulator homojunction at the (10 1¯ 0) surface of a Li-doped ZnO …

Spin injection and accumulation are key phenomena supporting a variety of concepts for
spin-electronic devices. These phenomena are expected to be enhanced in nanoparticles …