Laser-scanned pin photodiode (LSP) for image detection
Amorphous and microcrystalline glass/ZnO: Al/p (a-Si: H)/i (a-Si: H)/n (a-Si1 C: H)/Al imagers
with different n-layer resistivities were produced by plasma-enhanced chemical vapor …
with different n-layer resistivities were produced by plasma-enhanced chemical vapor …
Optimization of pinned photodiode pixels for high-speed time of flight applications
We discuss optimizations of pinned photodiode (PPD) pixels for indirect time of flight
sensors. We focus on the transfer-gate and dumping gate regions optimization, on the PPD …
sensors. We focus on the transfer-gate and dumping gate regions optimization, on the PPD …
Improved resolution in a pin image sensor by changing the structure of the doped layers
An amorphous ZnO/pin/Al imager that uses a small-signal scanning beam to read out the
short circuit current signal is presented. An analysis of the image geometric distortion …
short circuit current signal is presented. An analysis of the image geometric distortion …
Low dark current amorphous silicon metal-semiconductor-metal photodetector for digital imaging applications
S Ghanbarzadeh, S Abbaszadeh… - IEEE Electron Device …, 2014 - ieeexplore.ieee.org
A novel lateral amorphous silicon (a-Si) metal-semiconductor-metal photodetector
architecture is proposed using an organic blocking layer. Fabricated devices exhibit low …
architecture is proposed using an organic blocking layer. Fabricated devices exhibit low …
UV-responsive CCD image sensors with enhanced inorganic phosphor coatings
WAR Franks, MJ Kiik, A Nathan - IEEE Transactions on Electron …, 2003 - ieeexplore.ieee.org
Typical polysilicon gate charge-coupled device (CCD) image sensors are unresponsive to
ultraviolet (UV) light because of the high absorption of the radiation in polysilicon gate …
ultraviolet (UV) light because of the high absorption of the radiation in polysilicon gate …
Waveguide-integrated pin photodiode on InP
C Bornholdt, W Döldissen, F Fiedler… - Electronics …, 1987 - ui.adsabs.harvard.edu
An InGaAs PIN photodiode was vertically integrated with an inverted optical rib waveguide
in InGaAsP. Guided light was transferred to and absorbed by the photodiode at a rate of 0.07 …
in InGaAsP. Guided light was transferred to and absorbed by the photodiode at a rate of 0.07 …
Characterization of short-wavelength-selective a-Si: H MSM photoconductors for large-area digital-imaging applications
F Taghibakhsh, I Khodami… - IEEE Transactions on …, 2007 - ieeexplore.ieee.org
Photoconductor-type photodetectors are attractive as sensors due to their compatibility with
thin-film-transistor (TFT) fabrication processes. Since they exhibit photogain, photoconductor …
thin-film-transistor (TFT) fabrication processes. Since they exhibit photogain, photoconductor …
Experimental analysis of lag sources in pinned photodiodes
A measurement method is reported to distinguish the different mechanisms that lead to
image lag in image sensors based on pinned photodiodes (PPDs). This new method can …
image lag in image sensors based on pinned photodiodes (PPDs). This new method can …
Stacked nipnip heterojunctions for image recognition
This work aims to clarify possible improvements and physical limits of the Color Laser
Scanned Photodiode image sensor when used as high sensitive non-pixel image reader. A …
Scanned Photodiode image sensor when used as high sensitive non-pixel image reader. A …
Active pixel sensor architectures in -SiH for medical imaging
The most widely used architecture in large area amorphous silicon (a-Si) flat panel imagers
is the passive pixel sensor (PPS), which consists of a detector and a readout switch. While …
is the passive pixel sensor (PPS), which consists of a detector and a readout switch. While …