Abstract Two-dimensional (2D) simulation of GaAsSb/GaAs quantum dot (QD) solar cells is
presented. The effects of As mole fraction in GaAsSb QDs on the performance of the solar …

The main limitations of the conventional solar conversion device is that low energy photons
cannot excite charge carriers to the conduction band, therefore do not contribute to the …

We propose an innovative description to provide a quantitative basis to enhance the
conversion efficiency of InAs/GaAs quantum dot solar cells (QDSC). A theoretical approach …

In this work, a mathematical model has been developed to analyze the effect of the number
of quantum dot layers on the performance of solar cells. We have developed an analytical …

Abstract Absorption coefficients of GaSb/GaAs quantum dots (QDs) are calculated by the 8-
band strain-dependent k· p method and Fermi's golden rule. A more realistic but simple …

The hybrid structure of GaAs/GaAsSb quantum well (QW)/InAs quantum dots solar cells
(QDSCs) is analyzed using power-dependent and temperature-dependent …

The purpose of this work is to look for a practical structure for application of quantum dots
(QDs) in solar cells. We focus on a stack of strain‐compensated GaSb/GaAs type‐II QDs. We …

This paper focuses on the simulation and optimization of electrical and optical properties
such as current density-voltage (JV), external quantum efficiency (EQE) and the …

In this manuscript we carry out a comparative analysis of pin junction solar cells based on 10
stacks of InAs/GaAs quantum dots (QDs) capped with GaAs (Sb)(N) capping layers (CLs) …

Our work focuses on the simulation and optimization of InSb/GaAs quantum dot solar cell.
We have studied the effects of different parameters of the quantum dot such as the number …