We present an experimental and theoretical study about the carrier confinement geometry
and topology in InAs/GaAsSb quantum dots. The investigated sample consists of a field …

External control over the electron and hole wavefunctions geometry and topology is
investigated in a pin diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with …

We study the polarization response of the emission from type-II GaAsSb capped InAs
quantum dots. The theoretical prediction based on the calculations of the overlap integrals of …

Abstract Photoluminescence from individual InAs/InP quantum dots embedded within a
planar n–i structure is studied as a function of vertical electric field. We demonstrate control …

We investigate transport properties of stable gate-defined quantum dots formed in an InSb
0.87 As 0.13 quantum well. High g factor and strong spin-orbit coupling make InSb x As 1 …

Exciton states in type-II InP/InGaP and GaSb/GaAs self-assembled quantum dots and
quantum-dot superlattices subject to a normal magnetic field are calculated. Strain is …

We evaluated the temperature dependence of exciton luminescence spectra and exciton
diamagnetic shifts in self-formed closely stacked InAs/GaAs quantum dots and compared the …

The low temperature photoluminescence properties of InAs/InP self-assembled quantum
dots are investigated in magnetic fields up to 17 T. The zero field spectrum exhibits a …

Photoluminescence data from single self-assembled InAs/InP quantum dots in magnetic
fields up to 7 T are presented. Exciton g factors are obtained for dots of varying height …

We investigate how the voltage control of the exciton lateral dipole moment induces a
transition from singly to doubly connected topology in type-II InAs/GaAsxSb1− x quantum …