Method for depositing oxide film by thermal ALD and PEALD
A Fukazawa, H Fukuda - US Patent 10,655,221, 2020 - Google Patents
A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes:
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …
Method of growing a thin film onto a substrate
S Lindfors, PT Soininen - US Patent 7,018,478, 2006 - Google Patents
(57) ABSTRACT A method of growing a thin film onto a substrate placed in a reaction
chamber according to the ALD method by sub jecting the Substrate to alternate and …
chamber according to the ALD method by sub jecting the Substrate to alternate and …
Method of growing a thin film onto a substrate
S Lindfors, P Soininen - US Patent App. 11/358,698, 2007 - Google Patents
A method of growing a thin film onto a substrate placed in a reaction chamber according to
the ALD method by subjecting the substrate to alternate and successive surface reactions …
the ALD method by subjecting the substrate to alternate and successive surface reactions …
Method of growing a thin film onto a substrate
S Lindfors, PT Soininen - US Patent 6,783,590, 2004 - Google Patents
A method of growing a thin film onto a substrate placed in a reaction chamber according to
the ALD method by subjecting the substrate to alternate and successive surface reactions …
the ALD method by subjecting the substrate to alternate and successive surface reactions …
Oxide film forming method
T Hisamitsu, S Okura - US Patent 10,704,143, 2020 - Google Patents
Examples of a oxide film forming method include providing a precursor to a reaction space
including a substrate and a susceptor, and forming an oxide film on the substrate by …
including a substrate and a susceptor, and forming an oxide film on the substrate by …
Method of Forming A Metallic Oxide Film Using Atomic Layer Deposition
S Won, J Kim, J Park - US Patent App. 11/828,897, 2008 - Google Patents
A method of forming a metallic oxide film using atomic layer deposition includes loading a
substrate into a reactor, supplying a metallic source gas into the reactor and absorbing the …
substrate into a reactor, supplying a metallic source gas into the reactor and absorbing the …
Method for supplying gas with flow rate gradient over substrate
D Ishikawa, K Matsushita - US Patent 8,664,627, 2014 - Google Patents
A method for supplying gas over a substrate in a reaction chamber wherein a substrate is
placed on a pedestal, includes: supplying a first gas from a first side of the reaction chamber …
placed on a pedestal, includes: supplying a first gas from a first side of the reaction chamber …
Method of depositing thin film
DY Kim, SW Choi, YH Kim, S Okura… - US Patent App. 14 …, 2015 - Google Patents
Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a
source gas into a plurality of reactors for a first period, stopping supplying of the source gas …
source gas into a plurality of reactors for a first period, stopping supplying of the source gas …