The rapid development of neuro-inspired computing demands synaptic devices with ultrafast
speed, low power consumption, and multiple non-volatile states, among other features …

Brain-inspired neuromorphic computing has shown great promise beyond the conventional
Boolean logic. Nanoscale electronic synapses, which have stringent demands for …

This paper presents a unique opportunity of HZO ferroelectric tunnel junction (FTJ) for in-
memory computing. The device operates at an extremely low sub-nA current while …

Selectively activated inorganic synaptic devices, showing a high on/off ratio, ultrasmall
dimensions, low power consumption, and short programming time, are required to emulate …

Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1–x Zr x O2; HZO)
are a promising candidate for future applications, such as low-power memories and …

Ferroelectric tunnel junctions (FTJs) have been regarded as one of the most promising
candidates for next-generation devices for data storage and neuromorphic computing owing …

Next-generation non-volatile memories with ultrafast speed, low power consumption, and
high density are highly desired in the era of big data. Here, we report a high performance …

Neuromorphic computing provides alternative hardware architectures with high
computational efficiencies and low energy consumption by simulating the working principles …

Ferroelectric tunneling junctions (FTJs) with tunable tunneling electroresistance (TER) are
promising for many emerging applications, including non-volatile memories and …

In the quest for highly scalable and three-dimensional (3D) stackable memory components,
ferroelectric tunnel junction (FTJ) crossbar architectures are promising technologies for …