We report on the structure and electrical characteristics of silicon nanowire arrays prepared
by metal assisted chemical etching (MACE) method, investigated by cross-sectional …

Silicon nanowires (SiNWs) were prepared by metal-assist chemical etching (MACE) from
different doping types and resistivity of Si wafers,< 100> orientation. The coexistence of Si …

Silicon nanowires (SiNWs) were obtained on p-Si (100) substrate by Ag-assisted chemical
etching method in two-step process. The influence of the etching duration on the …

Silicon nanowires (SiNW) were formed on large grained, electron-beam crystallized silicon
(Si) thin films of only∼ 6 μm thickness on glass using nanosphere lithography (NSL) in …

The one-step metal assisted chemical etching (1-MACE) of p-Si wafers with different
resistivities and etching time in HF/AgNO 3/H 2 O 2 aqueous solution, resulted in large-area …

We report on a method for the extraction of silicon nanowires (SiNWs) from the by-product of
a plasma torch based spheroidization process of silicon. This by-product is a nanopowder …

Structural and optical properties of silicon nanowires synthesized by metal‐assisted
chemical etching are investigated. Macroscopic properties of nanowire arrays as well as …

Metal-assisted chemical etching of silicon is a commonly used method to fabricate vertical
aligned silicon nanowire arrays. In this report we show that if in the above method the …

This review reports on a new process for the synthesis of Si nanowires (NWs), based on the
wet etching of Si substrates assisted by a thin metal film. The approach exploits the …

Silicon nanowires (SiNWs) were produced by nanosphere lithography and metal assisted
chemical etching. The combination of these methods allows the morphology and …