Low dielectric constant materials for microelectronics
The ever increasing requirements for electrical performance of on-chip wiring has driven
three major technological advances in recent years. First, copper has replaced Aluminum as …
three major technological advances in recent years. First, copper has replaced Aluminum as …
Low dielectric constant materials for ULSI interconnects
▪ Abstract As integrated circuit (IC) dimensions continue to decrease, RC delay, crosstalk
noise, and power dissipation of the interconnect structure become limiting factors for ultra …
noise, and power dissipation of the interconnect structure become limiting factors for ultra …
Overview on low dielectric constant materials for IC applications
PS Ho, J Leu, WW Lee - Low Dielectric Constant Materials for IC …, 2003 - Springer
As integrated circuit dimensions continue to decrease, RC delay, crosstalk noise and power
dissipation of the interconnect structure become limiting factors for ultra-large-scale …
dissipation of the interconnect structure become limiting factors for ultra-large-scale …
Porous low dielectric constant materials for microelectronics
MR Baklanov, K Maex - Philosophical Transactions of the …, 2006 - royalsocietypublishing.org
Materials with a low dielectric constant are required as interlayer dielectrics for the on-chip
interconnection of ultra-large-scale integration devices to provide high speed, low dynamic …
interconnection of ultra-large-scale integration devices to provide high speed, low dynamic …
Research progress on porous low dielectric constant materials
M Xie, M Li, Q Sun, W Fan, S Xia, W Fu - Materials Science in …, 2022 - Elsevier
With the rapid development of ultra-large-scale integration (ULSI) of integrated circuits, the
feature size of the silicon chip continues shrinking and the physical gate length is …
feature size of the silicon chip continues shrinking and the physical gate length is …
Porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics: A comparative study
A Grill, V Patel, KP Rodbell, E Huang… - Journal of Applied …, 2003 - pubs.aip.org
The advancement in the performance of ultralarge scale integrated ULSI circuits is still being
hindered by the delay in the introduction of insulators of significantly reduced dielectric …
hindered by the delay in the introduction of insulators of significantly reduced dielectric …
Challenges in the implementation of low-k dielectrics in the back-end of line
The introduction of ultra low-k materials in copper technology has been much slower than
anticipated in the ITRS Roadmap. The introduction of porosity in low-k materials has …
anticipated in the ITRS Roadmap. The introduction of porosity in low-k materials has …
High and low dielectric constant materials
R Singh, RK Ulrich - The Electrochemical Society Interface, 1999 - iopscience.iop.org
26 The Electrochemical Society Interface• Summer 1999 ilicon-based dielectrics (SiO2,
Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of …
Si3N4, SiOxNy etc.) have been widely used as the key dielectrics in the manufacturing of …
[图书][B] Handbook of low and high dielectric constant materials and their applications, two-volume set
HS Nalwa - 1999 - books.google.com
Recent developments in microelectronics technologies have created a great demand for
interlayer dielectric materials with a very low dielectric constant. They will play a crucial role …
interlayer dielectric materials with a very low dielectric constant. They will play a crucial role …
[HTML][HTML] Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—State of the art
The improved performance of the semiconductor microprocessors was achieved for several
decades by continuous scaling of the device dimensions while using the same materials for …
decades by continuous scaling of the device dimensions while using the same materials for …