The electronic conductivities of ferroelectric domain walls have been extensively explored
over the past decade for potential nanoelectronic applications. However, the realization of …

Ferroelectric domain walls are atomically sharp topological defects that separate regions of
uniform polarization. The discovery of electrical conductivity in specific types of walls gave …

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …

Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

Whilst often discussed as non-trivial phases of low-dimensional ferroelectrics, modulated
polar phases such as the dipolar maze and the nano-bubble state have been appraised as …

The discovery and precise manipulation of atomic‐size conductive ferroelectric domain
walls offers new opportunities for a wide range of prospective electronic devices, and the …

Charged domain walls in ferroelectrics exhibit a quasi-two-dimensional conduction path
coupled to the surrounding polarization. They have been proposed for use as non-volatile …

A prominent challenge towards novel nanoelectronic technologies is to understand and
control materials functionalities down to the smallest scale. Topological defects in ordered …

DOI: 10.1002/adma. 201600160 conductivity is thermally activated and the current is
therefore very low. On the other hand, charged domain walls (CDWs) that break polarization …

Abstract Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile
memory and logic technologies in which domain walls, rather than domains, serve as an …