Abstract Self-assembled GaSb/GaAs quantum-ring-with-dot structures (QRDSs) are the
nanostructures exhibiting type-II band alignment. Each QRDS consists of both quantum ring …

Temperature-dependent photoluminescence (PL) and the corresponding carrier dynamics
of standard and coupled type-II GaSb/GaAs quantum rings (QRs) are investigated in this …

The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this
letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the …

We have studied the ensemble photoluminescence (PL) of 11 GaSb/GaAs quantum dot/ring
(QD/QR) samples over≥ 5 orders of magnitude of laser power. All samples exhibit a …

Optical absorption spectra of GaSb/GaAs quantum-ring-with-dot structures (QRDSs) are
calculated using Fermi's golden rule by which the electronic states involved in the optical …

We observed radiative decay times as a function of temperature by analyzing the thermal
relaxation from the excited exciton states in InGaAs coupled quantum dot (QD)–quantum …

This work investigates the electronic properties of and carrier dynamics in self-assembled
semiconductor quantum dots (QDs) by means of static capacitance-voltage (CV) …

A high-purity GaSb/GaAs quantum ring system is introduced that provides both strong hole-
confinement in the GaSb ring and electron confinement in its GaAs core. The latter is …

The room-temperature photoluminescence (PL) and electroluminescence (EL) exceeding
1.3 μm are observed for InGaAs-capped GaSb quantum-ring (QR) structures. With …

The interplay between structural properties and charge transfer in self-assembled quantum
ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot …