Oligosaccharide/silicon-containing block copolymers with 5 nm features for lithographic applications

JD Cushen, I Otsuka, CM Bates, S Halila, S Fort… - ACS …, 2012 - ACS Publications
Block copolymers demonstrate potential for use in next-generation lithography due to their
ability to self-assemble into well-ordered periodic arrays on the 3–100 nm length scale. The …

Directed self-assembly of block copolymers for nanolithography: fabrication of isolated features and essential integrated circuit geometries

MP Stoykovich, H Kang, KC Daoulas, G Liu, CC Liu… - Acs Nano, 2007 - ACS Publications
Self-assembling block copolymers are of interest for nanomanufacturing due to the ability to
realize sub-100 nm dimensions, thermodynamic control over the size and uniformity and …

Fabrication of nanostructures with long-range order using block copolymer lithography

JY Cheng, CA Ross, EL Thomas, HI Smith… - Applied physics …, 2002 - pubs.aip.org
Block copolymer lithography makes use of the self-assembling properties of block
copolymers to pattern nanoscale features over large areas. Although the resulting patterns …

Large-area nanosquare arrays from shear-aligned block copolymer thin films

SY Kim, A Nunns, J Gwyther, RL Davis, I Manners… - Nano …, 2014 - ACS Publications
While block copolymer lithography has been broadly applied as a bottom-up patterning
technique, only a few nanopattern symmetries, such as hexagonally packed dots or parallel …

[HTML][HTML] Inorganic block copolymer lithography

A Nunns, J Gwyther, I Manners - Polymer, 2013 - Elsevier
Block copolymer lithography, a process where block copolymer self-assembly is integrated
with conventional lithographic patterning, is emerging as a promising technology for …

Block copolymer based nanostructures: materials, processes, and applications to electronics

HC Kim, SM Park, WD Hinsberg - Chemical reviews, 2010 - ACS Publications
Block copolymers have attracted increasing interest due to their ability to self-organize at
nanometer scales. 1-18 When the strength of the repulsive interaction between blocks is …

Assembly of sub-10-nm block copolymer patterns with mixed morphology and period using electron irradiation and solvent annealing

JG Son, JB Chang, KK Berggren, CA Ross - Nano letters, 2011 - ACS Publications
Block copolymer self-assembly generates patterns with periodicity in the∼ 10–100 nm
range and is increasingly recognized as a route to lithographic patterning beyond the …

Cyclic block copolymers for controlling feature sizes in block copolymer lithography

JE Poelma, K Ono, D Miyajima, T Aida, K Satoh… - ACS …, 2012 - ACS Publications
Block copolymer lithography holds promise as a next-generation technique to achieve the
sub-20 nm feature sizes demanded by semiconductor roadmaps. While molecular weight …

Directed assembly of lamellae‐forming block copolymers by using chemically and topographically patterned substrates

SM Park, MP Stoykovich, R Ruiz, Y Zhang… - Advanced …, 2007 - Wiley Online Library
The integration of self-assembling block copolymer materials with traditional lithographic
techniques may enable inexpensive nanoscale patterning, provided that one can achieve …

Directed self-assembly of POSS containing block copolymer on lithographically defined chemical template with morphology control by solvent vapor

Y Tada, H Yoshida, Y Ishida, T Hirai… - …, 2012 - ACS Publications
Strongly segregating block copolymers (BCPs) are attractive as a means of forming 10 nm
scale lithographic features. Here, we report directed self-assembly of polyhedral oligomeric …