Field-effect tunneling transistor based on vertical graphene heterostructures

L Britnell, RV Gorbachev, R Jalil, BD Belle, F Schedin… - Science, 2012 - science.org
An obstacle to the use of graphene as an alternative to silicon electronics has been the
absence of an energy gap between its conduction and valence bands, which makes it …

Controlling the electronic structure of bilayer graphene

T Ohta, A Bostwick, T Seyller, K Horn, E Rotenberg - Science, 2006 - science.org
We describe the synthesis of bilayer graphene thin films deposited on insulating silicon
carbide and report the characterization of their electronic band structure using angle …

100-GHz transistors from wafer-scale epitaxial graphene

YM Lin, C Dimitrakopoulos, KA Jenkins, DB Farmer… - Science, 2010 - science.org
The high carrier mobility of graphene has been exploited in field-effect transistors that
operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized …

Wafer-scale graphene integrated circuit

YM Lin, A Valdes-Garcia, SJ Han, DB Farmer, I Meric… - Science, 2011 - science.org
A wafer-scale graphene circuit was demonstrated in which all circuit components, including
graphene field-effect transistor and inductors, were monolithically integrated on a single …

Quantum Hall Effect in a Gate-Controlled pn Junction of Graphene

JR Williams, L DiCarlo, CM Marcus - Science, 2007 - science.org
The unique band structure of graphene allows reconfigurable electric-field control of carrier
type and density, making graphene an ideal candidate for bipolar nanoelectronics. We …

Industry-compatible graphene transistors

F Schwierz - Nature, 2011 - nature.com
Industry-compatible graphene transistors | Nature Skip to main content Thank you for visiting
nature.com. You are using a browser version with limited support for CSS. To obtain the best …

A role for graphene in silicon-based semiconductor devices

K Kim, JY Choi, T Kim, SH Cho, HJ Chung - Nature, 2011 - nature.com
As silicon-based electronics approach the limit of improvements to performance and
capacity through dimensional scaling, attention in the semiconductor field has turned to …

High-speed graphene transistors with a self-aligned nanowire gate

L Liao, YC Lin, M Bao, R Cheng, J Bai, Y Liu, Y Qu… - Nature, 2010 - nature.com
Graphene has attracted considerable interest as a potential new electronic material,,,,,,,,,,.
With its high carrier mobility, graphene is of particular interest for ultrahigh-speed radio …

Graphene and boron nitride lateral heterostructures for atomically thin circuitry

MP Levendorf, CJ Kim, L Brown, PY Huang… - Nature, 2012 - nature.com
Precise spatial control over the electrical properties of thin films is the key capability
enabling the production of modern integrated circuitry. Although recent advances in …

Graphene barristor, a triode device with a gate-controlled Schottky barrier

H Yang, J Heo, S Park, HJ Song, DH Seo, KE Byun… - Science, 2012 - science.org
Despite several years of research into graphene electronics, sufficient on/off current ratio I
on/I off in graphene transistors with conventional device structures has been impossible to …