Large lateral photovoltaic effect in a-Si: H/c-Si p–i–n structure with the aid of bias voltage
S Qiao, Y Liu, J Liu, J Chen, G Yan… - Applied Physics …, 2015 - iopscience.iop.org
In this paper, for the first time, we report a significant enhancement of the lateral photovoltaic
effect (LPE) in a hydrogenated amorphous silicon/monocrystalline Si (a-Si: H/c-Si) p–i–n …
effect (LPE) in a hydrogenated amorphous silicon/monocrystalline Si (a-Si: H/c-Si) p–i–n …
Distance-independent lateral photovoltaic effect in a-Si: H/c-Si p–i–n structure with the aid of bias voltage
J Liu, L Zhang, Y Liu, S Qiao, G Yan, S Wang, G Fu - Materials Letters, 2016 - Elsevier
In this paper, for the first time, we report a laser power-dependent lateral photovoltaic effect
(LPE) in a hydrogenated amorphous silicon/monocrystalline Si (a-Si: H/c-Si) p–i–n structure …
(LPE) in a hydrogenated amorphous silicon/monocrystalline Si (a-Si: H/c-Si) p–i–n structure …
Distance-dependent lateral photovoltaic effect in a-Si: H (p)/a-Si: H (i)/c-Si (n) structure
S Qiao, J Chen, J Liu, N Fu, G Yan, S Wang - Applied surface science, 2015 - Elsevier
In this paper, we reported a new finding of lateral photovoltaic effect (LPE) in amorphous Si
thin films based on a-Si: H (p)/a-Si: H (i)/c-Si (n) structure. We find that the position sensitivity …
thin films based on a-Si: H (p)/a-Si: H (i)/c-Si (n) structure. We find that the position sensitivity …
Large lateral photovoltaic effect in µc-SiOx: H/a-Si: H/c-Si p–i–n structure
S Qiao, J Chen, J Liu, X Zhang, S Wang… - Applied Physics …, 2016 - iopscience.iop.org
In this paper, we report on a large lateral photovoltaic effect (LPE) in a hydrogenated
microcrystal silicon-oxygen (µc-SiO x: H)-based p–i–n structure. Compared with LPE in a …
microcrystal silicon-oxygen (µc-SiO x: H)-based p–i–n structure. Compared with LPE in a …
Power-dependent lateral photovoltaic effect in a-Si: H/c-Si pin structure at different temperatures
Y Liu, J Liu, Z Zhang, G Yan, S Qiao, S Wang, G Fu - Materials Letters, 2016 - Elsevier
In this letter, we report the power-dependent lateral photovoltaic effect (LPE) in a-Si: H/c-Si
pin structure at different temperatures for the first time. It was found that the position …
pin structure at different temperatures for the first time. It was found that the position …
Bias voltage-modulated lateral photovoltaic effect in indium tin oxide (ITO)/Si (n) structure
Y Liu, J Liu, S Qiao, S Wang, G Fu - Materials letters, 2015 - Elsevier
In this letter, a significant lateral photovoltaic effect (LPE) was found in ITO/Si (n) structure.
Moreover, with an external transverse bias voltage, the LPE improves dramatically. Our …
Moreover, with an external transverse bias voltage, the LPE improves dramatically. Our …
Potential superiority of p-type silicon-based metal–oxide–semiconductor structures over n-type for lateral photovoltaic effects
X Huang, C Mei, J Hu, D Zheng, Z Gan… - IEEE Electron …, 2016 - ieeexplore.ieee.org
In this letter, an unexpected stronger lateral photovoltaic effect was observed in Ni/SiO 2/p-Si
than in Ni/SiO 2/n-Si. The largest sensitivity is increased by more than four times, from 5.64 …
than in Ni/SiO 2/n-Si. The largest sensitivity is increased by more than four times, from 5.64 …
Lateral photovoltaic effect in the Ni-SiO2-Si structure with bias
X Ling, P Zhu, K Zhu, P Song, X Li - Optoelectronics Letters, 2024 - Springer
We designed a clamping device to study lateral photovoltaic effect (LPE) in Ni-SiO2-Si
structure with bias due to the appropriate barrier height. The LPE has a prominent sensitivity …
structure with bias due to the appropriate barrier height. The LPE has a prominent sensitivity …
The reverse lateral photovoltaic effect in boron-diffused Si pn junction structure
S Qiao, Y Liu, J Liu, J Chen, S Wang… - IEEE Electron Device …, 2015 - ieeexplore.ieee.org
Lateral photovoltaic effect (LPE) in boron-diffused Si pn junction has been first studied by
using different laser sources with wavelength ranging from visible to infrared. Our results …
using different laser sources with wavelength ranging from visible to infrared. Our results …
Low dark current and blue enhanced a-Si: H∕ a-SiC: H heterojunction ni-δi-p photodiode for imaging applications
Hydrogenated amorphous silicon a-Si: H pin and Schottky photodiodes are attractive for
imaging/detection applications due to their high absorption efficiency in the visible light …
imaging/detection applications due to their high absorption efficiency in the visible light …