Large area pin flexible image sensors
Large area pin image sensors deposited on plastic substrates were produced at low
temperatures (110° C) by PE-CVD and compared with similar sensors deposited on glass …
temperatures (110° C) by PE-CVD and compared with similar sensors deposited on glass …
p–i–n flexible imaging devices with optical readout
Large area two terminal p–i–n image sensors deposited on plastic substrates were
produced at low temperatures (110° C) by PE-CVD and compared with similar sensors …
produced at low temperatures (110° C) by PE-CVD and compared with similar sensors …
Improved resolution in a pin image sensor by changing the structure of the doped layers
An amorphous ZnO/pin/Al imager that uses a small-signal scanning beam to read out the
short circuit current signal is presented. An analysis of the image geometric distortion …
short circuit current signal is presented. An analysis of the image geometric distortion …
Laser-scanned pin photodiode (LSP) for image detection
Amorphous and microcrystalline glass/ZnO: Al/p (a-Si: H)/i (a-Si: H)/n (a-Si1 C: H)/Al imagers
with different n-layer resistivities were produced by plasma-enhanced chemical vapor …
with different n-layer resistivities were produced by plasma-enhanced chemical vapor …
Influence of the transducer configuration on the pin image sensor resolution
Amorphous ZnO: Al/a-SixC1–x: Hpin/Al optical imagers that use a small-signal scanning
beam to read out the photogenerated carriers are presented. The effect of the image …
beam to read out the photogenerated carriers are presented. The effect of the image …
A High Speed Contact-Type Image Sensor using Amorphous Silicon Alloy Pin Diodes
K Kitamura, H Mimura, K Tsukada… - MRS Online …, 1992 - cambridge.org
A new A4-size contact-type image sensor with 8 elements per millimeter (1,728 elements)
was developed by using amorphous silicon alloy pin photodiodes as the light receiving …
was developed by using amorphous silicon alloy pin photodiodes as the light receiving …
Influence of transparent electrodes on image sensor performance
K Kempter, H Wieczrek, M Hoheisel - MRS Online Proceedings …, 1985 - cambridge.org
The short response times required for image sensors demand blocking contacts at the
sensor cell. It was found that the junctions between transparent electrodes (ITO or a thin …
sensor cell. It was found that the junctions between transparent electrodes (ITO or a thin …
Two dimensional image sensors based on amorphous silicon alloy pin diodes
G de Cesare, P Di Rosa, S La Monica, R Salotti… - Journal of non …, 1993 - Elsevier
Two-dimensional amorphous silicon alloy image sensors have been developed. We have
built a demonstration device on a 9× 9cm 2 area, having a 500μm pixel pitch. The pixel is …
built a demonstration device on a 9× 9cm 2 area, having a 500μm pixel pitch. The pixel is …
Colour sensitive devices based on double pinip stacked photodiodes
In this work, we report on an amorphous silicon based image sensor with a bias voltage
controllable spectral response characteristics. This multilayered device is composed by two …
controllable spectral response characteristics. This multilayered device is composed by two …
Large area single and stacked pin photodiodes as a color image sensors
Single and stacked pin sensing elements for image recognition and color extraction
applications are presented. The aim of this work is to optimize the performance of the a-SiC …
applications are presented. The aim of this work is to optimize the performance of the a-SiC …