High temperature stability in few atomic layer MoS 2 based thin film heterostructures: structural, static and dynamic magnetization properties

NK Gupta, A Kumar, L Pandey, S Hait, V Barwal… - Nanoscale, 2023 - pubs.rsc.org
Layered transition metal dichalcogenides (TMDs) have shown commendable properties for
spintronic applications. From the device perspective, the structural quality of the TMD as well …

Anisotropy and Domain Structure in Nanoscale-Thick MoS2/CoFeB Heterostructures: Implications for Transition Metal Dichalcogenide-Based Thin Films

V Thiruvengadam, A Mishra, S Mohanty… - ACS Applied Nano …, 2022 - ACS Publications
Transition metal dichalcogenides (TMD) possess properties which makes them potential
candidates for various spintronic applications. Heterostructures of TMD with magnetic thin …

Modulation of the electronic structure and magnetism performance of V-doped monolayer MoS2 by strain engineering

Y Miao, H Bao, W Fan, F Ma - Journal of Physics and Chemistry of Solids, 2020 - Elsevier
The electronic structure and magnetism properties of V-doped monolayer MoS 2 under
biaxial strains were researched through the first-principle calculations. The V-doped MoS 2 …

Robust room-temperature ferromagnetism induced by defect engineering in monolayer MoS2

M Zhang, Q Li, W Cheng, Y Gao, B Liao, M Ying - Applied Surface Science, 2023 - Elsevier
Magnetism in two-dimensional materials is of great importance for exploring new physical
phenomena and developing novel devices in nanoscale. It's still a challenge to induce …

[HTML][HTML] Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

S Gupta, F Rortais, R Ohshima, Y Ando, T Endo… - Scientific Reports, 2019 - nature.com
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and
spintronics due to its exotic properties. However, high contact resistance at metal …

Interface-induced enhanced room temperature ferromagnetism in hybrid transition metal dichalcogenides

G Liu, X Xing, C Wu, J Jin, M Yan - Journal of Colloid and Interface Science, 2023 - Elsevier
Magnetic semiconductors with both electron charge and spin features exhibit tremendous
potential in spintronics. Although defective transition-metal dichalcogenides are promising …

Spin-Valve Effect in NiFe/MoS2/NiFe Junctions

W Wang, A Narayan, L Tang, K Dolui, Y Liu, X Yuan… - Nano …, 2015 - ACS Publications
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently
proposed as appealing candidate materials for spintronic applications owing to their …

Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer

Q Xie, W Lin, B Yang, X Shu, S Chen, L Liu… - Advanced …, 2019 - Wiley Online Library
Abstract 2D transition metal dichalcogenides have attracted much attention in the field of
spintronics due to their rich spin‐dependent properties. The promise of highly compact and …

Interlayer‐Incorporation of MoS2 (TM‐MoS2) to Achieve Unique Magnetic and Electronic Properties for Spintronics

H Bai, Q Wu, H Ai, D Liu, J Feng, LK Ang… - Advanced Electronic …, 2022 - Wiley Online Library
The multi‐layer 2D materials have attracted increasing interest because the intriguing
properties can be achieved by various strategies, such as incorporating ions into the …

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe2

D Shen, B Zhao, Z Zhang, H Zhang, X Yang, Z Huang… - ACS …, 2022 - ACS Publications
The limitation on the spintronic applications of van der Waals layered transition-metal
dichalcogenide semiconductors is ascribed to the intrinsic nonmagnetic feature. Recent …