Reliably Counting Atomic Planes of Few-Layer Graphene (n > 4)
We demonstrate a reliable technique for counting atomic planes (n) of few-layer graphene
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
(FLG) on SiO2/Si substrates by Raman spectroscopy. Our approach is based on measuring …
[PDF][PDF] Probing layer number and stacking order of few‐layer graphene by Raman spectroscopy
Graphene is a two-dimensional material defined as a planar honeycomb lattice of close-
packed carbon atoms, where the electrons exhibit a linear dispersion near Dirac K points …
packed carbon atoms, where the electrons exhibit a linear dispersion near Dirac K points …
The shear mode of multilayer graphene
The quest for materials capable of realizing the next generation of electronic and photonic
devices continues to fuel research on the electronic, optical and vibrational properties of …
devices continues to fuel research on the electronic, optical and vibrational properties of …
Scanning Photoemission Microscopy of Graphene Sheets on SiO2
Since Geim and his coworkers [1] succeeded in extracting individual sheets of carbon atoms
(graphene) from graphite crystals, graphene has been attracted much attention for its …
(graphene) from graphite crystals, graphene has been attracted much attention for its …
Surface potentials and layer charge distributions in few-layer graphene films
SS Datta, DR Strachan, EJ Mele, ATC Johnson - Nano letters, 2009 - ACS Publications
Graphene-derived nanomaterials are emerging as ideal candidates for postsilicon
electronics. Elucidating the electronic interaction between an insulating substrate and few …
electronics. Elucidating the electronic interaction between an insulating substrate and few …
Visualizing graphene edges using tip-enhanced Raman spectroscopy
W Su, D Roy - Journal of Vacuum Science & Technology B, 2013 - pubs.aip.org
The edges of a single layer graphene (SLG) flake play important roles in determining the
electronic transport properties of graphene devices. Accurate determination of the phase …
electronic transport properties of graphene devices. Accurate determination of the phase …
High‐Performance Graphene Devices on SiO2/Si Substrate Modified by Highly Ordered Self‐Assembled Monolayers
Graphene field-effect transistors (GFETs) are considered promising devices as a result of
graphene's notably high mobility, flexibility, and ultrathin nature.[1, 2] Indeed, high mobility …
graphene's notably high mobility, flexibility, and ultrathin nature.[1, 2] Indeed, high mobility …
Determining the number of layers in few‐layer graphene by combining Raman spectroscopy and optical contrast
M Bayle, N Reckinger, A Felten… - Journal of Raman …, 2018 - Wiley Online Library
Raman spectroscopy is commonly used to determine the number of layers of few‐layer
graphene (FLG) samples. In this work, we focus on the criteria based on the G‐band …
graphene (FLG) samples. In this work, we focus on the criteria based on the G‐band …
[HTML][HTML] Visualization of arrangements of carbon atoms in graphene layers by Raman mapping and atomic-resolution TEM
In-plane and out-of-plane arrangements of carbon atoms in graphene layers play critical
roles in the fundamental physics and practical applications of these novel two-dimensional …
roles in the fundamental physics and practical applications of these novel two-dimensional …
Growth of bilayer graphene on insulating substrates
Here we demonstrate a general transfer-free method to directly grow large areas of uniform
bilayer graphene on insulating substrates (SiO2, h-BN, Si3N4, and Al2O3) from solid carbon …
bilayer graphene on insulating substrates (SiO2, h-BN, Si3N4, and Al2O3) from solid carbon …