Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields,–. Different device concepts have …

Electrical manipulation and detection of antiferromagnetic order could be used to create
reliable and fast spintronic memory devices. The state of antiferromagnets can be read out …

Ferromagnets are key materials for sensing and memory applications. In contrast,
antiferromagnets, which represent the more common form of magnetically ordered materials …

The ability to represent information using an antiferromagnetic material is attractive for future
antiferromagnetic spintronic devices. Previous studies have focussed on the utilization of …

Spintronic elements based on spin transfer torque have emerged with potential for on‐chip
memory, but they suffer from large energy dissipation due to the large current densities …

Magnetic random access memory schemes employing magnetoelectric coupling to write
binary information promise outstanding energy efficiency. We propose and demonstrate a …

One of the motivations for multiferroics research is to find an energy-efficient solution to
spintronic applications, such as the solely electrical control of magnetic tunnel junctions …

The bistability of ordered spin states in ferromagnets provides the basis for magnetic
memory functionality. The latest generation of magnetic random access memories rely on an …

Electrically switchable magnetization is considered a milestone in the development of
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …

Rotating the magnetization of a magnetostrictive nanomagnet with electrically generated
strain dissipates far less energy than any other rotation method and would have been the …