One of the main bottleneck issues for room‐temperature antiferromagnetic spintronic
devices is the small signal read‐out owing to the limited anisotropic magnetoresistance in …

The discovery of the anomalous Hall effect in noncollinear antiferromagnetic metals
represents one of the most important breakthroughs for the emergent antiferromagnetic …

It is well established that the anomalous Hall effect displayed by a ferromagnet scales with
its magnetization. Therefore, an antiferromagnet that has no net magnetization should …

Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the
advantages of antiferromagnets producing no stray fields and exhibiting ultrafast …

Noncollinear antiferromagnets have promising potential for replacing ferromagnets in the
field of spintronics as high-density devices with ultrafast operation. To take full advantage of …

The respective unique merit of antiferromagnets and two-dimensional (2D) materials in
spintronic applications inspires us to exploit 2D antiferromagnetic spintronics. However, the …

We propose a new type of spin-valley locking (SVL), named C-paired SVL, in
antiferromagnetic systems, which directly connects the spin/valley space with the real space …

We report the successful fabrication of noncollinear antiferromagnetic D 019 Mn3Ge thin
films on insulating oxide substrates. The anomalous Hall effect and the large parallel …

Noncollinear antiferromagnetic materials have received dramatically increasing attention in
the field of spintronics as their exotic topological features such as the Berry-curvature …

Electrically switchable magnetization is considered a milestone in the development of
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …