Thin film position sensitive detector based on amorphous silicon p–i–n diode
The application of hydrogenated amorphous silicon (a-Si: H) to optoelectronic devices are
now well established as a viable low cost technology and is presently receiving much …
now well established as a viable low cost technology and is presently receiving much …
Thin film position sensitive detectors based on a-Si: H devices
E Fortunato, R Martins - Solid State Phenomena, 1995 - Trans Tech Publ
In this paper a review is given related to ID and 2D thin film position sensitive detectors
made with hydrogenated amorphous silicon. Examples of the position sensitive detectors …
made with hydrogenated amorphous silicon. Examples of the position sensitive detectors …
Sputtered a-Si: H thin-film position sensitive detectors
J Henry, J Livingstone - Journal of Physics D: Applied Physics, 2001 - iopscience.iop.org
This paper reports on three different position sensitive detector (PSD) structures based on rf
sputter deposited amorphous silicon. Most of the work reported by other researchers on thin …
sputter deposited amorphous silicon. Most of the work reported by other researchers on thin …
A comparative study of position-sensitive detectors based on Schottky barrier crystalline and amorphous silicon structures
J Henry, J Livingstone - Journal of Materials Science: Materials in …, 2001 - Springer
The response and properties of thin film position-sensitive detectors (PSDs) fabricated from
novel hydrogenated amorphous silicon (a-Si: H) Schottky barrier (SB) structures are …
novel hydrogenated amorphous silicon (a-Si: H) Schottky barrier (SB) structures are …
Thin film position sensitive detectors: from 1D to 3D applications
R Martins, E Fortunato - Technology and Applications of Amorphous …, 2000 - Springer
This chapter is a review of ID, 2D and 3D thin film position sensitive detectors (TFPSD) made
with hydrogenated amorphous silicon. Examples of different types of TFPSD are given …
with hydrogenated amorphous silicon. Examples of different types of TFPSD are given …
Material properties, project design rules and performances of single and dual-axis a-Si: H large area position sensitive detectors
We have developed large area (up to 80mm× 80mm) Thin Film Position Sensitive Detectors
(TFPSD) based on hydrogenated amorphous silicon (a-Si: H). Although crystalline silicon …
(TFPSD) based on hydrogenated amorphous silicon (a-Si: H). Although crystalline silicon …
Large area position sensitive detector based on amorphous silicon technology
We have developed a rectangular dual-axis large area Position Sensitive Detector (PSD),
with 5 cm× 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si: H) …
with 5 cm× 5 cm detection area, based on PIN hydrogenated amorphous silicon (a-Si: H) …
Thin‐film amorphous silicon position‐sensitive detectors
J Henry, J Livingstone - Advanced Materials, 2001 - Wiley Online Library
Optical position‐sensitive detectors are a useful class of sensor with a wide range of
applications in machine control systems, industrial alignment, and robotic vision. They have …
applications in machine control systems, industrial alignment, and robotic vision. They have …
Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors
R Martins, E Fortunato - Thin Solid Films, 1999 - Elsevier
The aim of this work is to present an analytical model which can to interpret the role of the
collecting resistive layer on the static performances exhibited by 2D amorphous silicon …
collecting resistive layer on the static performances exhibited by 2D amorphous silicon …
Role of the collecting resistive layer on the static characteristics of a 1D a‐Si:H thin film position sensitive detector
E Fortunato, R Martins - Review of scientific instruments, 1996 - pubs.aip.org
The aim of this work is to present an analytical model able to interpret the role of the thin
collecting resistive layer on the static performances exhibited by 1D amorphous silicon …
collecting resistive layer on the static performances exhibited by 1D amorphous silicon …