Transport properties and diamagnetism of dirac electrons in bismuth

Y Fuseya, M Ogata, H Fukuyama - Journal of the Physical Society of …, 2015 - journals.jps.jp
Bismuth crystal is known for its noteworthy properties resulting from particular electronic
states, eg, the Shubnikov–de Haas effect and the de Haas–van Alphen effect. Above all, the …

Interband contributions from the magnetic field on hall effects for Dirac electrons in bismuth

Y Fuseya, M Ogata, H Fukuyama - Physical review letters, 2009 - APS
The Hall conductivity σ xy of Dirac electrons with a spin-orbit interaction is examined. It is
shown that there is an unconventional contribution to σ xy generated by the interband effects …

Spin-Hall effect and diamagnetism of Dirac electrons

Y Fuseya, M Ogata, H Fukuyama - Journal of the Physical Society of …, 2012 - journals.jps.jp
Spin-Hall conductivity (SHC) of fully relativistic (4× 4 matrix) Dirac electrons is studied based
on the Kubo formula aiming at possible application to bismuth and bismuth–antimony alloys …

Transport properties of bismuth in quantizing magnetic fields

JH Mangez, JP Issi, J Heremans - Physical Review B, 1976 - APS
After the early work of Steele and Babiskin, low-temperature transport properties in bismuth
at high magnetic fields have been used to investigate the band structure, and only the …

Interband effects on magnetic susceptibility. II. Diamagnetism of bismuth

H Fukuyama, R Kubo - Journal of the Physical Society of Japan, 1970 - journals.jps.jp
The magnetic susceptibility of conduction electrons in the presence of spin-orbit interaction
is calculated. The model is that due to Wolff which assumes two bands separated by a small …

Origin of the Large Anisotropic Factor of Holes in Bismuth

Y Fuseya, Z Zhu, B Fauqué, W Kang, B Lenoir… - Physical Review Letters, 2015 - APS
The ratio of the Zeeman splitting to the cyclotron energy (M= Δ EZ/ℏ ω c) for holelike carriers
in bismuth has been quantified with great precision by many experiments performed during …

Thermodynamic evidence for valley-dependent density of states in bulk bismuth

R Küchler, L Steinke, R Daou, M Brando, K Behnia… - Nature Materials, 2014 - nature.com
Electron-like carriers in bismuth are described by the Dirac Hamiltonian, with a band mass
becoming a thousandth of the bare electron mass along one crystalline axis. The existence …

Angle dependence of the orbital magnetoresistance in bismuth

A Collaudin, B Fauqué, Y Fuseya, W Kang, K Behnia - Physical Review X, 2015 - APS
We present an extensive study of angle-dependent transverse magnetoresistance in
bismuth, with a magnetic field perpendicular to the applied electric current and rotating in …

Spin currents in semiconductors, metals, and insulators

N Nagaosa - Journal of the Physical Society of Japan, 2008 - journals.jps.jp
Recent theoretical developments on the physics of spin currents in semiconductors, metals
and insulators are reviewed with the stress on the role of relativistic spin–orbit interaction …

Magnetoresistance and valley degree of freedom in bulk bismuth

Z Zhu, B Fauqué, K Behnia… - Journal of Physics …, 2018 - iopscience.iop.org
In this paper, we first review fundamental aspects of magnetoresistance in multi-valley
systems based on the semiclassical theory. Then we will review experimental evidence and …